Properties and applications of high-mobility semiconducting nanotubes
T Dürkop, BM Kim, MS Fuhrer - Journal of Physics: Condensed …, 2004 - iopscience.iop.org
Experiments to determine the resistivity and charge-carrier mobility in semiconducting
carbon nanotubes are reviewed. Electron transport experiments on long chemical-vapour …
carbon nanotubes are reviewed. Electron transport experiments on long chemical-vapour …
Chemical detection with a single-walled carbon nanotube capacitor
ES Snow, FK Perkins, EJ Houser, SC Badescu… - Science, 2005 - science.org
We show that the capacitance of single-walled carbon nanotubes (SWNTs) is highly
sensitive to a broad class of chemical vapors and that this transduction mechanism can form …
sensitive to a broad class of chemical vapors and that this transduction mechanism can form …
Benchmarking nanotechnology for high-performance and low-power logic transistor applications
R Chau, S Datta, M Doczy, B Doyle… - IEEE transactions on …, 2005 - ieeexplore.ieee.org
Recently there has been tremendous progress made in the research of novel
nanotechnology for future nanoelectronic applications. In particular, several emerging …
nanotechnology for future nanoelectronic applications. In particular, several emerging …
High performance n-type carbon nanotube field-effect transistors with chemically doped contacts
Short channel (∼ 80 nm) n-type single-walled carbon nanotube (SWNT) field-effect
transistors (FETs) with potassium (K) doped source and drain regions and high-κ gate …
transistors (FETs) with potassium (K) doped source and drain regions and high-κ gate …
Quantum capacitance in nanoscale device modeling
DL John, LC Castro, DL Pulfrey - Journal of Applied Physics, 2004 - pubs.aip.org
Expressions for the “quantum capacitance” are derived, and regimes are discussed in which
this concept may be useful in modeling electronic devices. The degree of quantization is …
this concept may be useful in modeling electronic devices. The degree of quantization is …
High-mobility carbon-nanotube thin-film transistors on a polymeric substrate
ES Snow, PM Campbell, MG Ancona… - Applied Physics …, 2005 - pubs.aip.org
We report the development of high-mobility carbon-nanotube thin-film transistors fabricated
on a polymeric substrate. The active semiconducting channel in the devices is composed of …
on a polymeric substrate. The active semiconducting channel in the devices is composed of …
Reduction-controlled viologen in bisolvent as an environmentally stable n-type dopant for carbon nanotubes
Various viologens have been used to control the doping of single-walled carbon nanotubes
(SWCNTs) via direct redox reactions. A new method of extracting neutral viologen (V0) was …
(SWCNTs) via direct redox reactions. A new method of extracting neutral viologen (V0) was …
Strontium titanate surfaces
DS Deak - Materials Science and Technology, 2007 - journals.sagepub.com
Strontium titanate (SrTiO3) is a perovskite material with a variety of useful yet complex
surface structures. Recent studies of SrTiO3 have revealed how surface treatment can give …
surface structures. Recent studies of SrTiO3 have revealed how surface treatment can give …
Adaptive logic circuits with doping-free ambipolar carbon nanotube transistors
A CMOS-like inverter was integrated by using ambipolar carbon nanotube (CNT) transistors
without doping. The ambipolar CNT transistors automatically configure themselves to play a …
without doping. The ambipolar CNT transistors automatically configure themselves to play a …
Mixing at 50GHz using a single-walled carbon nanotube transistor
S Rosenblatt, H Lin, V Sazonova, S Tiwari… - Applied Physics …, 2005 - pubs.aip.org
We have probed the electrical properties of top-gated single-walled carbon nanotube
transistors at frequencies up to 50 GHz by using the device as a microwave mixer. We find …
transistors at frequencies up to 50 GHz by using the device as a microwave mixer. We find …