The reduction of the supply voltage is standard MOSFETs is impeded by the subthreshold
slope, which cannot be lowered below 60 mV/decade, even in ideal fully-depleted devices …

The band-modulation and sharp-switching mechanisms in Z 2-FET device operated as a
capacitorless 1T-DRAM memory are reviewed. The main parameters that govern the …

Electrostatic doping aims at replacing donor/acceptor dopant species with free electron/hole
charges induced by the gates in ultrathin MOS structures. Highly doped N+/P+ terminals and …

In this study, we propose newly designed feedback field-effect transistors that utilize the
positive feedback of charge carriers in single-gated silicon channels to achieve steep …

In this study, we present the steep switching characteristics of bendable feedback field-effect
transistors (FBFETs) consisting of p+–i–n+ Si nanowires (NWs) and dual-top-gate structures …

In this study, we present a reconfigurable feedback field-effect transistor (FET) that can
operate in both p-and n-type configurations using a feedback mechanism. In contrast to …

Hardware-based spiking neural networks (SNNs) to mimic biological neurons have been
reported. However, conventional neuron circuits in SNNs have a large area and high power …

Feedback field-effect transistors (FBFETs) are devices based on a positive feedback loop in
which the electrons and holes in the channel region act on the energy states of the potential …

In this article, we first utilize a zero subthreshold swing and zero impact ionization FET (Z2-
FET) as an innovative artificial spiking neuron and demonstrate it with CMOS-compatible …

We present polarity control of the carrier injection for a feedback field-effect transistor
(FBFET) with a selectively thinned p+-in+ Si nanowire (SiNW) channel and two separate …