The third generation wide bandgap (WBG) semiconductor materials exhibit a prominent role
in various applications such as adapters, uninterrupted power supplies, smart grids, and …

Extensive research in wide-bandgap material technology such as silicon carbide (SiC) has
led to the development of medium-voltage (MV) power semiconductor devices with blocking …

High-performance gate drive power supply (GDPS) plays a crucial role in ensuring the
reliability and safety of the gate driver for power semiconductor devices. This article focuses …

This article presents a wireless high-voltage power supply (WHPS) that leverages MHz
wireless power transfer (WPT) technology with the double-sided LCC compensation …

The auxiliary power supply (APS) is one of the critical components inside medium-voltage
(MV) power converters. Besides high insulation capability and small footprint, low common …

In the medium-and high-capacity power applications, typically multiple switches connected
in series and parallel are used in power electronic converters to handle high voltages and …

To fully utilize the benefits of medium-voltage (MV) silicon carbide (SiC)-based converter
and achieve high power density, the isolated auxiliary power supply (IAPS) needs to be as …

This article proposes an optimized design for a wireless power transfer converter serving as
an auxiliary power supply in a medium-voltage, high modular conversion system. A CLLC …

A high-voltage operation and breakneck switching speed of medium-voltage (MV) silicon
carbide (SiC) devices demand gate drivers (GDs) with high voltage withstanding capability …

Using MPPT and the Improved Non-Dominated Sorting Genetics (NSGA-II/INSGA-II)
algorithm method for constant switching with design optimization, this study prefers a solar …