The variation of the potential of a quantum well is similar to that of a deep trap. In that respect
a quantum well can capture and emit carriers in much the same way as a trap. The thermal …

InAs quantum dots grown in a GaAs matrix are investigated using capacitive transient
spectroscopy and transmission electron microscopy (TEM). Two deep levels are detected …

Using deep level transient spectroscopy, we have determined the band offset of a
GaAs/GaInAs/GaAs single quantum well. To interpret the data, we propose an original …

The effect of incoherent lamp annealing on the photoluminescence and optical absorption
characteristics in In x Ga1− x As/GaAs (x= 0.2 and 0.24) strained layer superlattices grown …

Deep‐level‐transient spectroscopy on molecular‐beam epitaxially grown square GaAs/n‐Al
x Ga1− x As (x= 0.24–0.39) single‐quantum wells shows a series of electron traps in the …

InAs quantum dots grown in a GaAs matrix are investigated using capacitance transient
spectroscopy and transmission electron microscopy (TEM). Trap states are measured which …

Deep level transient spectroscopy (DLTS) was performed on p‐isotype Si/SiGe/Si Schottky
barrier diodes in order to obtain the valence band offset between Si and SiGe. A single …

The GaAs/AlGaAs single quantum well (SQW) samples with nonintentionally doped
confining layers were studied using deep level transient spectroscopy (DLTS) and …

The tunneling from an AlGaAs confined thin layer to a GaAs layer in the GaAs/Al0. 33Ga0.
67As/GaAs structure during the trapped electron emission from deep level in the AlGaAs to …

Tin nanocrystals embedded in a SiSn layer grown by molecular beam epitaxy on n-type Si
are investigated by means of deep level transient spectroscopy. Two Sn related deep traps …