There have been many, sometimes conflicting, reports over the years as to how the
annealing of cold-worked metals may be affected in the presence of applied fields. The …

In this study, the reactivity between nozzle and submerged entry nozzle and alloy elements
in the steel (Al and Ce) under different electric field conditions was investigated. The results …

With the increasing power density of electronic devices, solder joints are prone to
electromigration under high currents, which results in a significant threat to reliability. In this …

Abstract Interface diffusion in Cu/Ru/TaN/Si stacks was investigated at different temperatures
with and without electric field. It was found that electric field annealing accelerated the …

Isothermal annealing in the temperature range of 300–600° C, microstructural
characterization, and analysis of the grain growth kinetics during annealing were carried out …

In the present paper, the effects of electric field annealing on interface diffusion of Cu/Ta/Si
stacks were studied by means of XRD, XPS and TEM. The barrier property of Ta films was …

It has been shown that enhanced electric field intensity (0–4.0 kV/cm) has an obvious effect
on accelerating atom diffusion in Cu/Ta/Si interconnect stacks at 650° C. The theoretical …

In this letter, we present a quantitative analysis of the influences caused by an electric field
annealing on interface atom diffusion in a Cu/Ta/Si stack at a range of temperatures 450∼ …

Abstract Cu/Ta/Si stacks were prepared and, subsequently, annealed at 650° C with
different electric field intensity (0–4.0 kV/cm). The effect of electric field intensity on atomic …

The microstructural evolution of (111) nt-Cu/Sn/polycrystalline Cu solder interconnects
undergoing LS EM was characterized in-situ and real-time by synchrotron radiation X-ray …