Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range
We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a
wide range of gate and drain voltages (V gs and V ds, respectively). Special attention is paid …
wide range of gate and drain voltages (V gs and V ds, respectively). Special attention is paid …
DC to AC Analysis of HC vs. BTI damage in N-EDMOS used in Single Photon Avalanche Diode cell
H Pitard, A Bravaix, X Federspiel, R Fillon… - Microelectronics …, 2023 - Elsevier
Abstract N-channel Extended Drain Metal Oxide Semiconductor (EDMOS) device is
analysed through its sensitivity to Hot-Carrier (HC), hot hole (HH) injections and Positive …
analysed through its sensitivity to Hot-Carrier (HC), hot hole (HH) injections and Positive …
A Pragmatic Model to Predict Future Device Aging
To predict long term device aging under use bias, models extracted from voltage
accelerated tests must be extrapolated into the future. The traditional model uses a power …
accelerated tests must be extrapolated into the future. The traditional model uses a power …
Hot-Carrier Damage in N-Channel EDMOS Used in Single Photon Avalanche Diode Cell through Quasi-Static Modeling
A Bravaix, H Pitard, X Federspiel, F Cacho - Micromachines, 2024 - mdpi.com
A single photon avalanche diode (SPAD) cell using N-channel extended-drain metal oxide
semiconductor (N-EDMOS) is tested for its hot-carrier damage (HCD) resistance. The …
semiconductor (N-EDMOS) is tested for its hot-carrier damage (HCD) resistance. The …