Nanoelectronic devices based on 2D materials are far from delivering their full theoretical
performance potential due to the lack of scalable insulators. Amorphous oxides that work …

Two-dimensional semiconductors could be used to fabricate ultimately scaled field-effect
transistors and more-than-Moore nanoelectronic devices. However, these targets cannot be …

For the integration of two-dimensional (2D) transition metal dichalcogenides (TMDC) with
high-performance electronic systems, one of the greatest challenges is the realization of …

2-D electronics is an important pathway to develop advanced monolithic integrated circuits.
Due to the nature of the van der Waals force between 2-D materials and dielectrics, it is a …

Abstract 2D materials offer a pathway for further scaling of CMOS technology. However, for
this to become a reality, both n-MOS and p-MOS should be realized, ideally with the same …

Observable hysteresis in the transfer characteristics of two-dimensional (2-D) based FETs
pose a roadblock in realizing reliable 2-D CMOS integrated circuits and requires precise …

To advance the technology readiness level of the field effect transistors (FETs) based on
multilayer two-dimensional (2D) molybdenum disulfide (MoS2), we conducted a large-scale …