Insulated gate and surface passivation structures for GaN-based power transistors
Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …
unprecedented power and frequency levels and demonstrating their capability as an able …
State of the art on gate insulation and surface passivation for GaN-based power HEMTs
T Hashizume, K Nishiguchi, S Kaneki, J Kuzmik… - Materials science in …, 2018 - Elsevier
In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …
Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs
In this paper, we present a systematic investigation of metal–organic chemical vapor
deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN …
deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN …
A nonlinear resistive switching behaviors of Ni/HfO2/TiN memory structures for self-rectifying resistive switching memory
This work reports forming free/self-rectifying resistive switching characteristics and
dependency of the top electrode (TE) of a crystalline HfO 2-based resistive switching …
dependency of the top electrode (TE) of a crystalline HfO 2-based resistive switching …
Trapping and Detrapping Mechanisms in β-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements
We present a detailed investigation of the trapping and detrapping mechanisms that take
place in the gate region of β-Ga 2 O 3 vertical finFETs and describe the related processes …
place in the gate region of β-Ga 2 O 3 vertical finFETs and describe the related processes …
Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors
K Nishiguchi, S Kaneki, S Ozaki… - Japanese Journal of …, 2017 - iopscience.iop.org
To investigate current linearity and operation stability of metal–oxide–semiconductor (MOS)
AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and …
AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and …
Status of aluminum oxide gate dielectric technology for insulated-gate GaN-based devices
A Calzolaro, T Mikolajick, A Wachowiak - Materials, 2022 - mdpi.com
Insulated-gate GaN-based transistors can fulfill the emerging demands for the future
generation of highly efficient electronics for high-frequency, high-power and high …
generation of highly efficient electronics for high-frequency, high-power and high …
[HTML][HTML] On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors
By means of combined current-voltage and capacitance-voltage sweep and transient
measurements, we present the effects of forward-bias stress and charge trapping …
measurements, we present the effects of forward-bias stress and charge trapping …
Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs
In this paper, fully recessed-gate GaN MISFETs with two different gate dielectrics, ie, plasma-
enhanced atomic layer deposition (PEALD) SiN and ALD Al 2 O 3 gate dielectric, are used …
enhanced atomic layer deposition (PEALD) SiN and ALD Al 2 O 3 gate dielectric, are used …
Review of bias-temperature instabilities at the III-N/dielectric interface
C Ostermaier, P Lagger, M Reiner, D Pogany - Microelectronics Reliability, 2018 - Elsevier
Two particular defects are commonly discussed at the III-N interface: the required donor
states, known to exist from the formation of the two-dimensional electron gas (2DEG) below …
states, known to exist from the formation of the two-dimensional electron gas (2DEG) below …