Gigahertz semiconductor laser at a center wavelength of 2 µm in single and dual-comb operation

M Gaulke, J Heidrich, N Huwyler, M Schuchter… - Optics …, 2023 - opg.optica.org
Dual-comb lasers are a new class of ultrafast lasers that enable fast, accurate and sensitive
measurements without any mechanical delay lines. Here, we demonstrate a 2-µm laser …

Bandgap engineering, monolithic growth, and operation parameters of GaSb-based SESAMs in the 2–2.4 µm range

BÖ Alaydin, M Gaulke, J Heidrich, M Golling… - Optical Materials …, 2022 - opg.optica.org
We present the detailed growth and characterization of novel GaSb-based semiconductor
saturable absorber mirrors (SESAMs) operating in the 2–2.4 µm spectral range. These …

324-fs Pulses From a SESAM Modelocked Backside-Cooled 2-μm VECSEL

J Heidrich, M Gaulke, M Golling… - IEEE Photonics …, 2022 - ieeexplore.ieee.org
We present the first modelocked backside-cooled GaSb VECSEL (Vertical External Cavity
Surface Emitting Laser) operating above. Using a two quantum well InGaSb SESAM …

Optically pumped GaSb-based thin-disk laser design considerations for cw and dual-comb operation at a center wavelength around 2 μm

M Gaulke, MC Schuchter, N Huwyler… - IEEE Journal of …, 2024 - ieeexplore.ieee.org
Vertical emitting optically pumped semiconductor laser technology in the GaSb material
system, operating in the short-wave infrared (SWIR) regime, has made significant …

Linear and nonlinear optical properties of semi-elliptical InAs quantum dots: effects of wetting layer thickness and electric field

BO Alaydin, D Altun, E Ozturk - Thin Solid Films, 2022 - Elsevier
In this paper, we have studied the optical properties of semi-elliptical InAs quantum dots
(QDs) embedded in GaAs. Under effective mass approximation, the finite element method …

3-W output power from a 2-µm InGaSb VECSEL using a hybrid metal-semiconductor Bragg reflector

N Huwyler, M Gaulke, J Heidrich, M Golling… - Optical Materials …, 2023 - opg.optica.org
We present improved thermal management of an optically-pumped vertical external cavity
surface emitting laser (VECSEL) at a center wavelength of around 2 µm. This was achieved …

High output power, single mode, and TEM00 operation of a multiple gain chip VECSEL using a twisted-mode configuration

D Mitten, M Hart, SH Warner, JP Penttinen, M Guina… - Optics …, 2023 - opg.optica.org
A vertical external cavity surface emitting laser (VECSEL) has been developed for a sodium
guide star application. Stable single frequency operation with 21 W of output power near …

[HTML][HTML] Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers

D Gonzalez, S Flores, V Braza, DF Reyes, AG Carro… - Nanomaterials, 2023 - mdpi.com
For optoelectronic devices from the near to the far infrared, the advantages of using ultrathin
III-Sb layers as quantum wells or in superlattices are well known. However, these alloys …

2m-distance external cavity VECSEL for wireless charging applications

Z Zhang, J Zhang, Y Zhou, X Zhang, Z Li, J Zhang… - Optics …, 2022 - opg.optica.org
We characterize laser generation in an ultralong air cavity (several meters in length) using
an optical-pumped semiconductor gain chip for laser wireless charging applications. The …

2-μm 1.5-W optically pumped semiconductor membrane laser

MC Schuchter, N Huwyler, M Golling… - IEEE Photonics …, 2024 - ieeexplore.ieee.org
We introduce the first diode-pumped GaSb-based semiconductor membrane laser with a
continuous wave (cw) output power of 1.5 W at a center wavelength of with an optical-to …