Atomic-scale control of graphene magnetism by using hydrogen atoms

H González-Herrero, JM Gómez-Rodríguez, P Mallet… - Science, 2016 - science.org
Isolated hydrogen atoms absorbed on graphene are predicted to induce magnetic moments.
Here we demonstrate that the adsorption of a single hydrogen atom on graphene induces a …

Giant quantum Hall plateaus generated by charge transfer in epitaxial graphene

JA Alexander-Webber, J Huang, DK Maude… - Scientific Reports, 2016 - nature.com
Epitaxial graphene has proven itself to be the best candidate for quantum electrical
resistance standards due to its wide quantum Hall plateaus with exceptionally high …

Van Hove singularities in doped twisted graphene bilayers studied by scanning tunneling spectroscopy

V Cherkez, GT De Laissardière, P Mallet, JY Veuillen - Physical Review B, 2015 - APS
The effect of electron doping on the van Hove singularities (vHs) which develop in twisted
graphene bilayers (tBLs) is studied for a broad range of rotation angles θ (1. 5∘< θ< 15∘) by …

High-resolution angle-resolved photoemission spectroscopy study of monolayer and bilayer graphene on the C-face of SiC

E Moreau, S Godey, X Wallart, I Razado-Colambo… - Physical Review B …, 2013 - APS
High-energy and k-space resolution angle-resolved photoemission spectroscopy
experiments were achieved on nominally single and bilayer graphene grown by Si-flux …

Exploring graphene formation on the C-terminated face of SiC by structural, chemical and electrical methods

CE Giusca, SJ Spencer, AG Shard, R Yakimova… - Carbon, 2014 - Elsevier
The properties of epitaxial graphene on the C-face of SiC are investigated using
comprehensive structural, chemical and electrical analyses. By matching similar nanoscale …

Modulating the surface state of SiC to control carrier transport in graphene/SiC

Y Jia, X Sun, Z Shi, K Jiang, H Liu, J Ben, D Li - Small, 2018 - Wiley Online Library
Silicon carbide (SiC) with epitaxial graphene (EG/SiC) shows a great potential in the
applications of electronic and photoelectric devices. The performance of devices is primarily …

An ab initio study on the electronic structures of the solid/liquid interface between TiB2 (0 0 0 1) surface and Al melts

HL Zhang, YF Han, YB Dai, SS Lu, J Wang… - Journal of alloys and …, 2014 - Elsevier
Crystallographic match working as the conventional criterion for heterogeneous nucleation
encounters problems when explaining the refinement mechanism of Al melts inoculated by …

A density functional theory study of epitaxial graphene on the (3× 3)-reconstructed C-face of SiC

I Deretzis, AL Magna - Applied Physics Letters, 2013 - pubs.aip.org
A density functional theory study of epitaxial graphene on the (⁠3×3⁠)-reconstructed C-face of
SiC | Applied Physics Letters | AIP Publishing Skip to Main Content Umbrella Alt Text Umbrella …

Why graphene growth is very different on the C face than on the Si face of SiC: Insights from surface equilibria and the reconstruction

L Nemec, F Lazarevic, P Rinke, M Scheffler, V Blum - Physical Review B, 2015 - APS
We address the stability of the surface phases that occur on the C side of 3 C-SiC (1¯ 1¯ 1¯)
at the onset of graphene formation. In this growth range, experimental reports reveal a …

An ab initio study on atomic and electronic structures of two-dimensional Al3Ti at Al/TiB2 interface

H Men - Materials Research Express, 2016 - iopscience.iop.org
The atomic and electronic structures of a two-dimentional (2D) Al 3 Ti layer at Al/TiB 2
interface has been investigated using first-principle calculations. The result reveals the 2D …