Tunnel field effect transistor device structures: A comprehensive review
Downscaling of metal oxide semiconductor field effect transistors (MOSFET) has resulted in
increased short channel effects (SCEs), off-leakage current and subthreshold swing. At room …
increased short channel effects (SCEs), off-leakage current and subthreshold swing. At room …
Multiscale Simulation and Machine Learning Facilitated Design of Two-Dimensional Nanomaterials-Based Tunnel Field-Effect Transistors: A Review
CI Tsang, H Pu, J Chen - arXiv preprint arXiv:2409.18965, 2024 - arxiv.org
Traditional transistors based on complementary metal-oxide-semiconductor (CMOS) and
metal-oxide-semiconductor field-effect transistors (MOSFETs) are facing significant …
metal-oxide-semiconductor field-effect transistors (MOSFETs) are facing significant …
An analytical modeling of conical gate-all-around tunnel field effect transistor
In this paper a new analytical modeling of Conical Gate-All-Around Tunnel Field Effect
Transistor has been proposed and verified by TCAD Simulation. The Electrostatic …
Transistor has been proposed and verified by TCAD Simulation. The Electrostatic …
Tunnel field effect transistor (TFET): A review
FA Omar, TM Abdolkader - International Journal of Materials …, 2024 - ijmti.journals.ekb.eg
Tunnel field effect transistors (TFETs) offer a solution to the concerns that accompanied
conventional Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) as a result of …
conventional Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) as a result of …
TFET: From Material to Device Perspective
PK Kumawat, S Birla, N Singh - … Si-Based CMOS Devices: Materials to …, 2024 - Springer
Due to continuous scaling of the MOS, the performance has been degraded due to PVT
variations. The high level of leakage currents, threshold variations, and short-channel effects …
variations. The high level of leakage currents, threshold variations, and short-channel effects …
TFET: From Material to Device
PK Kumawat, S Birla, N Singh - … Si-Based CMOS Devices: Materials to … - books.google.com
Due to continuous scaling of the MOS, the performance has been degraded due to PVT
variations. The high level of leakage currents, threshold variations, and short-channel effects …
variations. The high level of leakage currents, threshold variations, and short-channel effects …