In this paper, lateral gate-all-around nano-sheet transistors (NSH-FETs) are explored from
intrinsic performance to dc and ring oscillator (RO) benchmark compared with FinFETs and …

The performances of FinFET, gate-all-around (GAA) nanowire/nanosheet, and U-shaped
FETs (UFETs) are studied targeting the 3-nm node (N3) and beyond CMOS dimensions. To …

A contact resistance () becomes a major parasitic resistance in highly scaled modern
semiconductor devices. A wrap-around contact (WAC) has been suggested as a promising …

The gate-all-around (GAA) silicon nanosheet (SiNS) metal-oxide-semiconductor field-effect
transistor (MOSFET) structures have been recognized as excellent candidates to achieve …

In recent CMOS technology, extreme shrinking of contact area at source/drain regions raises
serious concerns of high metal/semiconductor contact resistance. Confronting this problem …

We present a very general geometrical correction method for enforcing collisions and other
geometrical constraints between polygonal mesh surfaces. It is based on a global resolution …

This paper reports ultralow contact resistivities (ρ c) achieved on highly doped p-SiGe with
two low-temperature contact formation methods. One method combines precontact …

As CMOS scaling proceeds with sub-10 nm nodes, new architectures and materials are
implemented to continue increasing performances at constant footprint. Strained and …

In this paper, standard cell design for iN7 CMOS platform technology targeting the tightest
contacted poly pitch (CPP) of 42 nm and a metal pitch of 32 nm in the FinFET technology is …

Direct exchange interaction allows spins to be magnetically ordered. Additionally, it can be
an efficient manipulation pathway for low-powered spintronic logic devices. We present a …