Radiation effects on silicon MESFET devices and circuits

Self-aligned half-micrometer silicon MASFET's with metallic amorphous silicon gate

M Sakaue, K Murase, Y Amemiya - IEEE transactions on …, 1986 - ieeexplore.ieee.org
Ternary metallic amorphous silicon (a-Si-Ge-B), having a high barrier height feature with
crystalline semiconductors is applied to the gate metal of Si MESFET's. A submicrometer …
被引用次数：10 相关文章 所有 8 个版本

Total dose radiation effects on silicon MESFET circuits

HM Darley, TW Houston, LR Hite - IEEE Transactions on …, 1983 - ieeexplore.ieee.org
Silicon MESFET technology is an attractive candidate for a gamma dose hard FET
technology suitable for digital logic and sRAM circuits. This paper describes the results of an …
被引用次数：3 相关文章 所有 4 个版本

Transient radiation effects on silicon MESFET integrated circuits

WM Shedd, JL Sampson… - IEEE Transactions on …, 1983 - ieeexplore.ieee.org
Transient Radiation Effects on Silicon MESFET Integrated Circuits Page 1 IEEE
Transactions on Nuclear Science, Vol. NS-30, No. 6, December 1983 TRANSIENT …
被引用次数：2 相关文章 所有 4 个版本

Reliability Considerations Of Si And GaAs Active Components In A Radiation Environment

RS Singh, WD Raburn - Reliability Considerations in Fiber …, 1987 - spiedigitallibrary.org
The performance of silicon (Si) and gallium arsenide (GaAs) active components operating in
a radiation environment is discussed. These components include diode detectors, Si …
相关文章 所有 4 个版本

[引用][C] Radiation Damage in Microcircuits Session Summary

DL Hartill - IEEE Transactions on Nuclear Science, 1986 - ieeexplore.ieee.org
The question of radiation damage to microcircuits has in the past not been of concern to
builders of high energy physics detectors. High luminosity hadron colliders which are being …
被引用次数：1 相关文章 所有 4 个版本