This work presents several ultra-fast Active Quenching-Active Reset (AQAR) circuits with a
novel avalanche detection circuit, fabricated in a 28 nm Fully Depleted Silicon on Insulator …

Abstract N-channel Extended Drain Metal Oxide Semiconductor (EDMOS) device is
analysed through its sensitivity to Hot-Carrier (HC), hot hole (HH) injections and Positive …

In this article, a 3D electro-optical simulation method is presented in order to estimate the
Photon Detection Probability (PDP) of Single-Photon Avalanche Diodes (SPAD). The …

A single photon avalanche diode (SPAD) cell using N-channel extended-drain metal oxide
semiconductor (N-EDMOS) is tested for its hot-carrier damage (HCD) resistance. The …

A very fast Active Quenching-Active Reset Circuit is proposed for the afterpulsing reduction
in a Single Photon Avalanche Diode (SPAD). The proposed circuit is designed in a 28 nm …

This article presents an optimization of Single Photon Avalanche Diodes (SPAD)
implemented in CMOS 28nm Fully Depleted Silicon-On-Insulator technology. With the …

This article proposes a 3D electro-optical simulation method to estimate the Photon
Detection Probability (PDP) of Single-Photon Avalanche Diodes (SPAD) implemented in …

Single-photon avalanche diodes (SPADs) are highly sensitive photodetectors capable of
detecting light at the photon level. SPADs have a wide range of applications, including …

The first Active Quenching-Active Reset (AQAR) circuit for a novel inherent 3D SPAD pixel is
designed in a 28 nm CMOS Fully Depleted Silicon On Insulator (FDSOI) technology. Thanks …

L'objectif de cette thèse concerne la simulation, la conception et la caractérisation de
nouvelles structures de diodes à avalanche à photon unique (Single Photon Avalanche …