Design, process, and characterization of complementary metal–oxide–semiconductor circuits and six-transistor static random-access memory in 4H-SiC
CL Hung, BY Tsui, TK Tsai, LJ Lin… - ECS Journal of Solid …, 2022 - iopscience.iop.org
Design, Process, and Characterization of Complementary Metal–Oxide–Semiconductor
Circuits and Six-Transistor Static Random-Access Memory in 4H-SiC - IOPscience Skip to …
Circuits and Six-Transistor Static Random-Access Memory in 4H-SiC - IOPscience Skip to …