Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive
random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The …

The bottom-pinned spin-orbit torque (SOT) MRAM devices are fabricated to form high quality
interfaces between layers including the spin-orbit torque (SOT) layer and the free layer of the …

A method for fabricating semiconductor device includes the steps of first providing a
substrate having a magnetic random access memory (MRAM) region and a logic region …

A semiconductor device including a magnetic tunnel junction stack, a metallic hard mask
aligned above the magnetic tunnel junction stack and an air gap surrounding the metallic …

A method for fabricating a semiconductor device includes the steps of: forming a first inter-
metal dielectric (IMD) layer on a substrate; forming a first metal interconnection and a …