Magnetoelectric control of antiferromagnetic domain state in Cr2O3 thin film

Y Shiratsuchi, K Toyoki, R Nakatani - Journal of Physics …, 2021 - iopscience.iop.org
Magnetoelectric (ME) effect is a type of cross-coupling between unconjugated physical
quantities, such as the interplay between magnetization and electric field. The ME effect …

Electrical switching of the perpendicular Néel order in a collinear antiferromagnet

W He, T Zhang, Y Zhou, C Wan, H Wu, B Cui, J Xia… - Nature …, 2024 - nature.com
Spintronics is based on the electrical manipulation of magnetic order through current-
induced spin torques. In collinear antiferromagnets with perpendicular magnetic anisotropy …

Presence of X-ray magnetic circular dichroism signal for zero-magnetization antiferromagnetic state

N Sasabe, M Kimata, T Nakamura - Physical Review Letters, 2021 - APS
X-ray magnetic circular dichroism (XMCD) is generally not observed for antiferromagnetic
(AFM) states because XMCD signals from the antiparallelly coupled spins cancel each …

Giant gate modulation of antiferromagnetic spin reversal by the magnetoelectric effect

K Ujimoto, H Sameshima, K Toyoki, T Moriyama… - NPG Asia …, 2024 - nature.com
In this study, using the Pt/Cr2O3/Pt epitaxial trilayer, we demonstrate the giant voltage
modulation of the antiferromagnetic spin reversal and the voltage-induced 180° switching of …

[HTML][HTML] Growth-associated emergence of spontaneous magnetization in Al-doped Cr2O3 thin film

T Tada, H Sakurai, K Toyoki, S Ichikawa, T Ina… - Acta Materialia, 2024 - Elsevier
Abstract Development of antiferromagnetic/ferrimagnetic materials has been an area of
active pursuit to advance the antiferromagnetic/ferrimagnetic spintronics. In this paper, we …

[HTML][HTML] Anomalous Hall effect in Pt/Al-doped Cr2O3 epitaxial film

I Iino, T Tada, K Toyoki, R Nakatani, Y Shiratsuchi - AIP Advances, 2023 - pubs.aip.org
The anomalous Hall effect (AHE) was studied for the Pt (111)/(Al 0.04 Cr 0.96) 2 O 3 (0001)
epitaxial bilayer wherein the finite small magnetization is intentionally generated by doping …

Magnetic anisotropy of doped Cr2O3 antiferromagnetic films evaluated by utilizing parasitic magnetization

T Nozaki, M Al-Mahdawi, Y Shiokawa, SP Pati… - Journal of Applied …, 2020 - pubs.aip.org
In Cr 2 O 3 thin films doped with Al or Ir, we have discovered a parasitic magnetization,
accompanied by the antiferromagnetic order, with tunable direction and magnitude. In this …

Magnetoelectric Induced Switching of Perpendicular Exchange Bias Using 30-nm-Thick Cr2O3 Thin Film

Y Shiratsuchi, Y Tao, K Toyoki, R Nakatani - Magnetochemistry, 2021 - mdpi.com
Magnetoelectric (ME) effect is a result of the interplay between magnetism and electric field
and now, it is regarded as a principle that can be applied to the technique of controlling the …

Exchange‐Biased Quantum Anomalous Hall Effect

P Zhang, PP Balakrishnan, C Eckberg… - Advanced …, 2023 - Wiley Online Library
The quantum anomalous Hall (QAH) effect is characterized by a dissipationless chiral edge
state with a quantized Hall resistance at zero magnetic field. Manipulating the QAH state is …

Parasitic magnetism in magnetoelectric antiferromagnet

S Ye, Y Shiokawa, SP Pati… - ACS applied materials & …, 2020 - ACS Publications
Parasitic magnetism plays an important role in magnetoelectric spin switching of
antiferromagnetic oxides, but its mechanism has not been clearly investigated. Unlike the …