The present work reviews some fundamental aspects of scintillators, including the light yield,
decay time, emission wavelength, afterglow, timing resolution and energy resolution …

Abstract We prepare InGaN/GaN multiple quantum well (MQW) structure by metal–organic
vapour phase epitaxy and characterize it by fine XRD measurements. We demonstrate its …

A huge acceleration of the yellow band defect luminescence (YB) with increasing Si and Ge
doping concentration in GaN layers has been observed and studied. The donor doping …

Photoluminescence (PL) and scintillation properties of GaN film deposited on Al 2 O 3
substrate were evaluated. In PL and X-ray induced scintillation spectra, two emission bands …

For dosimetric measurements using an implantable optical fiber probe with GaN (Gallium
Nitride) scintillator as radioluminescence (RL) transducer, a bi-channel method is proposed …

Abstract Metal Organic Vapour Phase epitaxy (MOVPE) grown GaN layers doped with Si
were studied by means of radio-, photo-and thermally stimulated luminescence, scintillation …

In this work neutron‐sensitive scintillators based on GaN have been produced by MOCVD.
The scintillators consist of GaNepilayers grown on 2 inch double side polished sapphire …

In order to evaluate carrier densities created by 1.6 MeV protons and to trace radiation
damage of the 2.5 μm thick GaN epi-layers grown by metalorganic chemical vapor …

We report on the behavior of InGaN/GaN multiple quantum well structure during excitation in
UV-C and vacuum UV spectral region. Photoluminescence excitation spectra show peaks …

Optimizing the emission properties of materials in ultraviolet and deep blue (UV-DB) is
interesting in the development of new scintillator devices for the detection of X-ray,-ray, and …