Aging mechanisms and accelerated lifetime tests for SiC MOSFETs: An overview
Accelerated lifetime tests (ALTs) play a critical role in long-term reliability studies of SiC
MOSFETs, including lifetime estimation, failure analysis, and condition monitoring. This …
MOSFETs, including lifetime estimation, failure analysis, and condition monitoring. This …
Comprehensive analysis of electrical parameters degradations for SiC power MOSFETs under repetitive short-circuit stress
J Wei, S Liu, L Yang, J Fang, T Li, S Li… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
The degradations of electrical parameters for silicon carbide power MOSFETs under
repetitive short-circuit (SC) stress are investigated in detail in this paper. It demonstrates that …
repetitive short-circuit (SC) stress are investigated in detail in this paper. It demonstrates that …
Condition monitoring of SiC MOSFETs based on gate-leakage current estimation
P Wang, J Zatarski, A Banerjee… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Silicon carbide (SiC) MOSFETs have a lower loss, faster switching, and better thermal
conductivity compared to silicon MOSFETs; however, their reliability remains a major …
conductivity compared to silicon MOSFETs; however, their reliability remains a major …
Review of methodologies for evaluating short-circuit robustness and reliability of SiC power MOSFETs
To accelerate the broad application of silicon carbide (SiC) power MOSFETs, their short-
circuit (SC) robustness and reliability must be thoroughly evaluated. This article, therefore …
circuit (SC) robustness and reliability must be thoroughly evaluated. This article, therefore …
1200-V SiC MOSFET short-circuit ruggedness evaluation and methods to improve withstand time
This article presents the short-circuit (SC) capability evaluation of TO-247-3 packaged
silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) based …
silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) based …
Condition monitoring of SiC MOSFETs utilizing gate leakage current
P Wang, J Zatarski, A Banerjee… - 2020 IEEE Applied …, 2020 - ieeexplore.ieee.org
Silicon carbide (SiC) MOSFETs are widely acknowledged for low loss, fast switching and
remarkable thermal conductivity compared to silicon (Si) counterparts; however, reliability …
remarkable thermal conductivity compared to silicon (Si) counterparts; however, reliability …
Trap analysis based on low-frequency noise for SiC power MOSFETs under repetitive short-circuit stress
JL Wang, YQ Chen, JT Feng, XB Xu… - IEEE Journal of the …, 2020 - ieeexplore.ieee.org
In this paper, the degradation behavior of the electrical characteristics was investigated, and
trap analysis based on low-frequency noise (LFN) was carried out for the commercial 1.2 …
trap analysis based on low-frequency noise (LFN) was carried out for the commercial 1.2 …
On-state voltage measurement of high-side power transistors in three-phase four-leg inverter for in-situ prognostics
This paper presents the challenges of implementing in-situ prognostics to practical power
converters and proposes a new on-state voltage (V DSON) monitoring circuit for the high …
converters and proposes a new on-state voltage (V DSON) monitoring circuit for the high …
Challenges and Implementation of Online in-Situ RDSON Measurement in a Three-Phase Inverter
This paper addresses the critical issue of real-time monitoring of on-state resistance
(RDSON) monitoring of all power semiconductor devices within a three-phase inverter. An …
(RDSON) monitoring of all power semiconductor devices within a three-phase inverter. An …
In-Situ Instrumentation for Degradation Monitoring of Power Semiconductor Devices in Power Electronics Converters
C Roy - 2023 - search.proquest.com
Modern power and energy systems rely heavily on power electronics converters. The most
significant component of these converters is the power semiconductor switching devices …
significant component of these converters is the power semiconductor switching devices …