Theory of electronic structure evolution in GaAsN and GaPN alloys
Using the empirical pseudopotential method and large atomistically relaxed supercells, we
have systematically studied the evolution of the electronic structure of GaP 1− x N x and …
have systematically studied the evolution of the electronic structure of GaP 1− x N x and …
Direct determination of electron effective mass in GaNAs/GaAs quantum wells
Electron effective mass (me*) in GaN x As 1− x/GaAs quantum wells (QWs) is investigated by
the optically detected cyclotron resonance technique. The me* values of 0.12 m 0 and 0.19 …
the optically detected cyclotron resonance technique. The me* values of 0.12 m 0 and 0.19 …
Electronic properties of ga (in) nas alloys
IA Buyanova, WM Chen, B Monemar - Materials Research Society …, 2001 - cambridge.org
A brief review on the present knowledge of the electronic properties of the Ga (In) NAs
ternary and quaternary alloys is given mainly from an experimental perspective. The …
ternary and quaternary alloys is given mainly from an experimental perspective. The …
Pseudopotential theory of dilute III–V nitrides
We review the empirical pseudopotential method and its recent applications to the III–V
nitride alloys GaAsN, GaPN, GaInAsN and GaAsPN. We discuss how studies using this …
nitride alloys GaAsN, GaPN, GaInAsN and GaAsPN. We discuss how studies using this …
Mechanism for rapid thermal annealing improvements in undoped structures grown by molecular beam epitaxy
A systematic investigation of the effect of rapid thermal annealing (RTA) on optical properties
of undoped GaNAs/GaAs structures is reported. Two effects are suggested to account for the …
of undoped GaNAs/GaAs structures is reported. Two effects are suggested to account for the …
GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics
The potential to extend the emission wavelength of photonic devices further into the near-
and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing …
and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing …
Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy
The impact of rapid thermal annealing on the optical emission of GaInNAs/GaAs quantum
wells (QWs) grown by molecular beam epitaxy with high In and N content is shown to be …
wells (QWs) grown by molecular beam epitaxy with high In and N content is shown to be …
[PDF][PDF] Arrangement of nitrogen atoms in GaAsN alloys determined by scanning tunneling microscopy
HA McKay, R Feenstra, T Schmidtling, UW Pohl - 2001 - kilthub.cmu.edu
The pair distribution function of nitrogen atoms in GaAs0. 983N0. 017 has been determined
by scanning tunneling microscopy. Nitrogen atoms in the first and third planes relative to the …
by scanning tunneling microscopy. Nitrogen atoms in the first and third planes relative to the …
Signature of an intrinsic point defect in
The first experimental signature of an intrinsic defect in GaNAs is provided from an optically
detected magnetic resonance study. The resolved central hyperfine structure identifies the …
detected magnetic resonance study. The resolved central hyperfine structure identifies the …
Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states
In this work we investigate the effect of rapid thermal annealing (RTA) on the performance of
solar cells consisting of different GaAsSbN-based structures and correlate the device results …
solar cells consisting of different GaAsSbN-based structures and correlate the device results …