Design and performance assessment of graded channel gate-all-around silicon nanowire FET for biosensing applications
Ashima, V Dhandapani, B Raj - Silicon, 2023 - Springer
In this paper, we present a graded channel gate-all-around silicon nanowire-FET biosensor
working on dielectric modulation through a cavity carved at the center of the gate for label …
working on dielectric modulation through a cavity carved at the center of the gate for label …
Surface potential analysis of dual material gate silicon-based ferroelectric TFET for biosensing application
M Venkatesh, P Parthasarathy… - ECS Journal of Solid …, 2024 - iopscience.iop.org
By means of a dielectric modulation method, this research offers the first ever 2D analytical
model for the surface potential of a dual material gate Ferroelectric-TFET (DMG-Fe-TFET) …
model for the surface potential of a dual material gate Ferroelectric-TFET (DMG-Fe-TFET) …
High-frequency performance characteristics of the double-gate schottky barrier tunnel field effect transistor in analog and radio-frequency applications
In this paper, a novel structure of Double Gate Schottky Barrier Tunnel Field Effect Transistor
(DG-SBTFET) has been designed and simulated. The DG-SBTFET has two sources (NiSi) …
(DG-SBTFET) has been designed and simulated. The DG-SBTFET has two sources (NiSi) …
Analytical modeling of STFET biosensor using modulated dielectric for ultrasensitive detection of biomolecules
BP Kumar, A Vinod, B Jena, A Arivarasi… - … Journal of Numerical …, 2024 - Wiley Online Library
This paper proposed analytical modeling of a Schottky tunnel field‐effect transistor (STFET)—
based biosensor with adjusted gate oxide. This model is developed by resolving the …
based biosensor with adjusted gate oxide. This model is developed by resolving the …
Analysis of interface trap charges on RF/analog performances of dual-gate-source-drain Schottky FET for high-frequency applications
P Anusuya, P Kumar - Multiscale and Multidisciplinary Modeling …, 2024 - Springer
This article mainly focuses on the impact on interface trap charges (ITCs) on dual gate
source-drain Schottky barrier tunnel field effect transistor (DGSD-STFET) using a high-k …
source-drain Schottky barrier tunnel field effect transistor (DGSD-STFET) using a high-k …
Assessing the Impact of Source Pocket Length Variation to Examine DC/RF to Linearity Performance of DG-TFET
This research examines the variation in source pocket length at the corner region of source–
channel interface (SCi) with hetero-oxide triple metal gate. The investigated DC and analog …
channel interface (SCi) with hetero-oxide triple metal gate. The investigated DC and analog …
Analysis of the DC and RF performance of the Double-Gate-Source-Drain Schottky Barrier Tunnel Field Effect Transistor (DGSD-STFET) for high frequency …
P Anusuya, V Shalini, P Kumar - 2023 3rd International …, 2023 - ieeexplore.ieee.org
In this study, the performance of a Dual gate source drain schottky barrier tunnel field effect
transistor (DGSD-STFET) is analysed using a high k dielectric composed of HfO 2 and a low …
transistor (DGSD-STFET) is analysed using a high k dielectric composed of HfO 2 and a low …
[PDF][PDF] 1 School of Advanced Sciences, VIT-Chennai University, Tamil Nadu 600127, India, Email: anusuya. p2020@ vitstudent. ac. in 2 School of Electronics VIT …
P Anusuya, V Shalini, P Kumar - researchgate.net
In this study, the performance of a Dual gate source drain schottky barrier tunnel field effect
transistor (DGSD-STFET) is analysed using a high k dielectric composed of HfO2 and a low …
transistor (DGSD-STFET) is analysed using a high k dielectric composed of HfO2 and a low …