Resonance-free frequency response of a semiconductor laser
We show experimentally and analytically that fast spontaneous recombination lifetime, τ B,
spon, leads to resonance-free frequency response in semiconductor lasers, and as a …
spon, leads to resonance-free frequency response in semiconductor lasers, and as a …
The transistor laser: Theory and experiment
HW Then, M Feng, N Holonyak - Proceedings of the IEEE, 2013 - ieeexplore.ieee.org
The quantum-well (QW) heterojunction bipolar transistor (HBT) laser the transistor laser (TL),
inherently a fast switching device, operates by transporting small minority base charge …
inherently a fast switching device, operates by transporting small minority base charge …
Tilted-charge high speed (7 GHz) light emitting diode
We demonstrate a higher speed form of light emitting diode (LED), an asymmetrical two-
junction tilted-charge LED, utilizing an n-type buried “drain” layer beneath the p-type “base” …
junction tilted-charge LED, utilizing an n-type buried “drain” layer beneath the p-type “base” …
Electro-optical logics by three-terminal quantum-well-light-emitting transistors integration
HT Cheng, YT Liang, YT Huang, SJ Hsu, WH Lin… - Photonics …, 2024 - opg.optica.org
The three-terminal quantum-well-light-emitting transistors (QW-LETs) possess appealing
characteristics, including multipath bidirectional electrical and optical inputs/outputs …
characteristics, including multipath bidirectional electrical and optical inputs/outputs …
Microwave circuit model of the three-port transistor laser
HW Then, M Feng, N Holonyak - Journal of Applied Physics, 2010 - pubs.aip.org
Based on an earlier charge control analysis, we have constructed a microwave circuit model
of a three-port quantum-well (QW) transistor laser (TL) by extending Kirchhoff's law to …
of a three-port quantum-well (QW) transistor laser (TL) by extending Kirchhoff's law to …
Current Gain Enhancement at High-Temperature Operation of Triple-Quantum-Well Heterojunction Bipolar Light-Emitting Transistor for Smart Thermal Sensor …
M Kumar, SY Ho, SJ Hsu, PC Li… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
In this article, we present an investigation into the amplification characteristics of triple-
quantum-well heterojunction bipolar light-emitting transistors (TQW-HBLETs or TQW-HBTs …
quantum-well heterojunction bipolar light-emitting transistors (TQW-HBLETs or TQW-HBTs …
Improving OOK Modulation Rate of Visible LED by Peaking and Carrier Sweep-Out Effects Using -Schottky Diodes-Capacitance Circuit
PH Binh, VD Trong, P Renucci… - Journal of lightwave …, 2013 - ieeexplore.ieee.org
In this paper, we present an improvement for LED driver circuit by inserting a threshold
voltage on the resistive branch of the conventional RC current-shaping circuit. The proposed …
voltage on the resistive branch of the conventional RC current-shaping circuit. The proposed …
The effect of mode spacing on the speed of quantum-well microcavity lasers
Oxide-confined quantum-well microcavity vertical-cavity surface-emitting lasers (VCSELs) of
three-diameters (aperture size d A∼ 2, 2.5, and 3.5 μ m) have been fabricated that …
three-diameters (aperture size d A∼ 2, 2.5, and 3.5 μ m) have been fabricated that …
Fabrication and characterization of deep ridge InGaAsP/InP light emitting transistors
W Huo, S Liang, C Zhang, S Tan, L Han, H Xie… - Optics …, 2014 - opg.optica.org
Deep Ridge InGaAsP/InP Light Emitting Transistors (LET) with~ 1.5 μm light emissions have
been fabricated and characterized. In the deep ridge LETs, all the light emissions are from …
been fabricated and characterized. In the deep ridge LETs, all the light emissions are from …
Physics of base charge dynamics in the three port transistor laser
HW Then, M Feng, N Holonyak - Applied Physics Letters, 2010 - pubs.aip.org
The base charge dynamics of the quantum-well (QW) transistor laser (TL) is analyzed by
constructing a model based on earlier incomplete charge control analysis. We extend …
constructing a model based on earlier incomplete charge control analysis. We extend …