A 47% Fractional Bandwidth Sequential Power Amplifier with High Back-off Efficiency
This paper presents a 2.9-4.7 GHz sequential power amplifier (SPA) based on two 10 W
GaN high electron mobility transistors (HEMTs). A wideband output combiner and input …
GaN high electron mobility transistors (HEMTs). A wideband output combiner and input …