Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the
implementation of epitaxial‐thin‐film‐based studies, which have driven many advances in …

Abstract Two-dimensional (2D) materials have emerged as promising candidates for various
optoelectronic applications based on their diverse electronic properties, ranging from …

Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-
effect transistors, low-power logic, and nonvolatile memories. We devised a film with a …

We introduce a new type of liquid cell for in situ transmission electron microscopy (TEM)
based on entrapment of a liquid film between layers of graphene. The graphene liquid cell …

Ferroelectric materials are characterized by a permanent electric dipole that can be reversed
through the application of an external voltage, but a strong intrinsic coupling between …

SrRuO 3 is endowed with three remarkable features. First, it is a moderately correlated
material that exhibits several novel physical properties; second, it permits the epitaxial …

Strong interest in resistive switching phenomena is driven by a possibility to develop
electronic devices with novel functional properties not available in conventional systems …

Ferroelectric materials are well‐suited for a variety of applications because they can offer a
combination of high performance and scaled integration. Examples of note include …

We demonstrate a highly reproducible control of local electron transport through a
ferroelectric oxide via its spontaneous polarization. Electrons are injected from the tip of an …