In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …

Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …

Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …

The authors review the band line-ups and band offsets between semiconductors, dielectrics,
and metals, including the theory, experimental data, and the chemical trends. Band offsets …

We report on the first demonstration of stable photoelectrochemical water splitting and
hydrogen generation on a double-band photoanode in acidic solution (hydrogen bromide) …

In this review paper we will report the current state of research regarding the doping of III-
nitride materials and their alloys. GaN is a mature material with both n-type and p-type …

In this Letter, we demonstrate that with the merit of nanowire structure and a self-catalytic
growth process p-type InN can be realized for the first time by “direct” magnesium (Mg) …

We have investigated the correlated surface electronic and optical properties of [0001]-
oriented epitaxial InN nanowires grown directly on silicon. By dramatically improving the …

Self-powered nanodevices are highly desirable for green energy technology, internet of
things, wearable devices, sensors, and implanted biomedical devices. In this aspect …

Indium nitride (InN) is characterized by its high electron mobility, making it a ground-
breaking material for high frequency electronics. The difficulty of depositing high-quality …