Challenges and opportunities in advanced Ge pMOSFETs
E Simoen, J Mitard, G Hellings, G Eneman… - Materials Science in …, 2012 - Elsevier
This paper aims at reviewing the state-of-the art of Ge pMOSFETs for future high-
performance CMOS devices. Key in the development is the integration of a Ge channel on a …
performance CMOS devices. Key in the development is the integration of a Ge channel on a …
Mobility enhancement technology for scaling of CMOS devices: overview and status
The aggressive downscaling of complementary metal–oxide–semiconductor (CMOS)
technology to the sub-21-nm technology node is facing great challenges. Innovative …
technology to the sub-21-nm technology node is facing great challenges. Innovative …
Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to
grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully …
grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully …
Germanium-on-silicon mid-infrared arrayed waveguide grating multiplexers
In this letter, we describe the use of a germanium-on-silicon waveguide platform to realize
an arrayed waveguide grating (AWG) operating in the 5 μm wavelength range, which can be …
an arrayed waveguide grating (AWG) operating in the 5 μm wavelength range, which can be …
Crystalline properties and strain relaxation mechanism of CVD grown GeSn
F Gencarelli, B Vincent… - ECS Journal of Solid …, 2013 - iopscience.iop.org
In this contribution, we discuss the crystalline properties of strained and strain-relaxed CVD-
grown GeSn layers with Sn content in the range 6.4–12.6 at.%. A positive deviation from …
grown GeSn layers with Sn content in the range 6.4–12.6 at.%. A positive deviation from …
Wafer‐scale Ge epitaxial foils grown at high growth rates and released from porous substrates for triple‐junction solar cells
V Depauw, C Porret, M Moelants… - Progress in …, 2023 - Wiley Online Library
Germanium is listed as a critical raw material, and for environmental and economic
sustainability reasons, strategies for lower consumption must be implemented. A promising …
sustainability reasons, strategies for lower consumption must be implemented. A promising …
Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
In order to outperform current uniaxial compressively strained Silicon channel pMOSFET
technology (with embedded SiGe source/drain), switching to strained Ge channel is …
technology (with embedded SiGe source/drain), switching to strained Ge channel is …
Next generation of Ge1− ySny (y= 0.01-0.09) alloys grown on Si (100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission
Film growth and reaction kinetics studies have shown that trigermane (Ge 3 H 8) is a
superior Ge source for the epitaxial synthesis of Ge 1− y Sn y/Si (100) alloys using ultra-high …
superior Ge source for the epitaxial synthesis of Ge 1− y Sn y/Si (100) alloys using ultra-high …
Mid-infrared all-optical modulation in low-loss germanium-on-silicon waveguides
L Shen, N Healy, CJ Mitchell, JS Penades… - Optics letters, 2015 - opg.optica.org
All-optical modulation has been demonstrated in a germanium-on-silicon rib waveguide
over the mid-infrared wavelength range of 2–3 μm using a free-carrier absorption scheme …
over the mid-infrared wavelength range of 2–3 μm using a free-carrier absorption scheme …
Low-temperature Ge and GeSn chemical vapor deposition using Ge2H6
In this work, digermane (Ge2H6) is investigated as low temperature Ge precursor for
Chemical Vapor Deposition. High quality Ge epitaxial growth on Si substrates is reported at …
Chemical Vapor Deposition. High quality Ge epitaxial growth on Si substrates is reported at …