GeSn/Ge Multiquantum-Well Vertical-Cavity Surface-Emitting pin Structures and Diode Emitters on a 200 mm Ge-on-Insulator Platform
An efficient monolithically integrated light source with complementary metal-oxide-
semiconductor (CMOS) compatibility remains the missing component to enable Si photonics …
semiconductor (CMOS) compatibility remains the missing component to enable Si photonics …
Highly tensile-strained self-assembled Ge quantum dots on InP substrates for integrated light sources
Highly tensile-strained Ge quantum dots (TS-Ge-QDs) emitting structures with different size
were successfully grown on InP substrates by molecular beam epitaxy. Dislocation-free TS …
were successfully grown on InP substrates by molecular beam epitaxy. Dislocation-free TS …
The impact of strained layers on current and emerging semiconductor laser systems
SJ Sweeney, TD Eales, AR Adams - Journal of Applied Physics, 2019 - pubs.aip.org
In this paper, we discuss how the deliberate and controlled introduction of strain can be
used to improve the performance of semiconductor lasers. We show how strain-induced …
used to improve the performance of semiconductor lasers. We show how strain-induced …
Synthesis of fluorescent and water-dispersed germanium nanoparticles and their cellular imaging applications
J Hu, Q Lu, C Wu, M Liu, H Li, Y Zhang, S Yao - Langmuir, 2018 - ACS Publications
In recent years, Ge nanomaterials have aroused a great deal of attention because of their
unique physical and chemical properties. However, the current synthesis methods bear …
unique physical and chemical properties. However, the current synthesis methods bear …
Germanium nanoparticles: Intrinsic peroxidase-like catalytic activity and its biosensing application
J Hu, Q Lu, C Wu, M Liu, H Li, Y Zhang, S Yao - Talanta, 2019 - Elsevier
In recent years, germanium nanoparticles (Ge NPs) have attracted considerable research
attention because of its excellent electrical and optical properties. However, it is mainly …
attention because of its excellent electrical and optical properties. However, it is mainly …
The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source
A direct band gap type-I Ge 0.75 Sn 0.25/Ge 0.682 Sn 0.158 Si 0.16 QD heterostructure is
proposed for mid-IR light sources. The effects of strain and composition are theoretically …
proposed for mid-IR light sources. The effects of strain and composition are theoretically …
Photoluminescence Evolution with Deposition Thickness of Ge Nanostructures Embedded in GaSb
Herein, low‐temperature and temperature‐dependent photoluminescence (PL)
measurements are carried out on highly tensile‐strained Ge nanostructures embedded in …
measurements are carried out on highly tensile‐strained Ge nanostructures embedded in …
Growth mode of tensile-strained Ge quantum dots grown by molecular beam epitaxy
Growth mode of tensile-strained Ge quantum dots on different III–V buffers by molecular
beam epitaxy is studied by a combination of reflection high-energy electron diffraction …
beam epitaxy is studied by a combination of reflection high-energy electron diffraction …
The formation of intermediate layers in covered Ge/Si heterostructures with low-temperature quantum dots: a study using high-resolution transmission electron …
MS Storozhevykh, LV Arapkina… - Semiconductor …, 2020 - iopscience.iop.org
The method of software analysis of high-resolution TEM images using the peak pairs
algorithm [Galindo PL et al 2007 Ultramicroscopy 107 1186–93] in combination with Raman …
algorithm [Galindo PL et al 2007 Ultramicroscopy 107 1186–93] in combination with Raman …
Abnormal strain in suspended GeSn microstructures
A suspended GeSn microstructure is realized by a two-step selective wet etching technique
with the aim of fully relaxing the compressive strain, promoting the indirect to direct bandgap …
with the aim of fully relaxing the compressive strain, promoting the indirect to direct bandgap …