Application of p-channel power VDMOSFET as a high radiation doses sensor
MM Pejovic - IEEE Transactions on Nuclear Science, 2015 - ieeexplore.ieee.org
This paper presents a comparative study of RADFETs and commercial p-channel power
VDMOSFETs sensitivity to gamma-ray irradiation. Sensitivity was characterized by the …
VDMOSFETs sensitivity to gamma-ray irradiation. Sensitivity was characterized by the …
Response to ionizing radiation of different biased and stacked pMOS structures
MS Martínez-García, JT del Río, A Jaksic… - Sensors and Actuators A …, 2016 - Elsevier
Different low-cost commercial general-purpose MOSFETs and a RADFET are subjected to
ionizing photon beams for comparison. The main characteristics of the radiation response …
ionizing photon beams for comparison. The main characteristics of the radiation response …
[HTML][HTML] Effect of gamma ray absorbed dose on the FET transistor parameters
This article tries to explain a modified method on dosimetry, based on electronic solid state
including MOSFET (metal oxide semiconductor field effect) transistors. For this purpose …
including MOSFET (metal oxide semiconductor field effect) transistors. For this purpose …
Comparative study of MOSFET response to photon and electron beams in reference conditions
MS Martínez-García, JT del Río, AJ Palma… - Sensors and Actuators A …, 2015 - Elsevier
A comparative study of radiation-sensitive field effect transistors (RADFETs) response to
photon and electron beams has been carried out in reference conditions. Both types of …
photon and electron beams has been carried out in reference conditions. Both types of …
[HTML][HTML] Electron irradiation effects and room-temperature annealing mechanisms for SiC MOSFETs
M He, P Dong, Y Ma, Q Yu, S Cao, W Huang, Q Xu… - Results in Physics, 2024 - Elsevier
In this work, the electron irradiation effects and post-irradiation annealing (PIA) response on
SiC MOSFETs were investigated and analyzed in terms of the evolution of oxide-and …
SiC MOSFETs were investigated and analyzed in terms of the evolution of oxide-and …
Characteristics of a pMOSFET suitable for use in radiotherapy
S Pejovic, P Bosnjakovic, O Ciraj-Bjelac… - Applied Radiation and …, 2013 - Elsevier
The paper describes dose response and signal fading of Al-gate p-channel (metal oxide
semiconductor field effect transistors) MOSFETs in the range of gamma radiation doses …
semiconductor field effect transistors) MOSFETs in the range of gamma radiation doses …
Sensitivity of P‐Channel MOSFET to X‐and Gamma‐Ray Irradiation
M Pejović, O Ciraj-Bjelac, M Kovačević… - International Journal …, 2013 - Wiley Online Library
Investigation of Al‐gate p‐channel MOSFETs sensitivity following irradiation using 200 and
280 kV X‐ray beams as well as gamma‐ray irradiation of 60Co in the dose range from 1 to 5 …
280 kV X‐ray beams as well as gamma‐ray irradiation of 60Co in the dose range from 1 to 5 …
Response of pMOS dosemeters on gamma-ray irradiation during its re-use
MM Pejovic, MM Pejovic… - Radiation protection …, 2013 - academic.oup.com
Response of pMOS dosemeters during two successive irradiations with gamma-ray
irradiation to a dose of 35 Gy and annealing at room and elevated temperature has been …
irradiation to a dose of 35 Gy and annealing at room and elevated temperature has been …
Investigation of sensitivity and threshold voltage shift of commercial MOSFETs in gamma irradiation
This article is about the absorbed-dose-dependent threshold voltage shift of the MOSFET
transistors. Performance of the MOSFETs has been tested in different gate voltages …
transistors. Performance of the MOSFETs has been tested in different gate voltages …
RADFET response to photon and electron beams
A comparative study of Radiation-sensitive field effect transistors (RADFETs) response to
photon and electron beams has been carried out in reference conditions. Both types of …
photon and electron beams has been carried out in reference conditions. Both types of …