This paper presents modeling of correlated RF noise in the intrinsic base and collector
currents of SiGe heterojunction bipolar transistors using quasi-static equivalent circuits. The …

The general van Vliet noise model for transistors was derived for base minority carriers only
under adiabatic boundary conditions. This paper extends the model by including the emitter …

This paper models the input non-quasi-static (NQS) effect of bipolar transistors using charge
partitioning. The input NQS effect associated with the base minority carrier transport is …

Accurate radio frequency (RF) noise models for individual transistors are critical to minimize
noise during mixed-signal analog and RF circuit design. This dissertation proposes two …

This paper examines the impact of collector-base space charge region (CB SCR) on RF
noise in scaled bipolar transistors by solving the Langevin equation of electron noise …

This paper investigates the impact of fringe BE junction on base majority carrier RF noise in
SiGe HBTs. Due to fringe effect, the base hole noise should be modeled by correlated noise …