We have presented theory and experimentally demonstrated an efficient method for
drastically reducing the power consumption of the rf/microwave amplifiers based on HEMT …

Accurate detection of quantum states is a vital step in the development of quantum
computing. Image-charge detection of quantum states of electrons on liquid helium can …

A new approach to deep-cooled amplifier design with microwatt level consumed/dissipated
power is presented. The relevant technique is based on exploiting the unsaturated regime of …

In this work, high electron mobility transistor (HEMT) was studied as a circuit element for
amplifiers operating at temperatures of the order of 10–100 mK. To characterize the HEMT …

Abstract Specific High Electron Mobility Transistors (HEMTs) have been realized and
characterized. At 4.2 K, with a drain-source current I ds of 1.55 mA and drain-source voltage …

In order to fill the gap of low-temperature and low-frequency noise field-effect transistors and
to meet the needs in various experiments under deep cryogenic conditions, specially …

The consequences of the transition to a quantum description of magnetic flux motion in the
superconducting ring closed by an ScS type Josephson junction are considered. Here we …

The amount of space debris orbiting the earth is increasing. More than 700 000 objects with
critical sizes of more than 1 cm have the potential to cause severe damage to space-based …

We present a time domain multiplexer for high impedance bolometer arrays. It is based on
the use of quantum-point-contact high-electron-mobility-transistors (QPC-HEMTs) as low …

For decades, high-impedance and low-frequency readout electronics with the lowest noise
level is based on silicon JFETs (Junction Field-Effect Transistors) with an equivalent input …