Reversal of Band-Ordering Leads to High Hole Mobility in Strained p-type Scandium Nitride

S Rudra, D Rao, S Poncé, B Saha - Nano Letters, 2023 - ACS Publications
Low hole mobility of nitride semiconductors is a significant impediment to realizing their high-
efficiency device applications. Scandium nitride (ScN), an emerging rocksalt indirect band …

[HTML][HTML] Thermal expansion coefficient of ScN (111) thin films grown on Si (111) determined by X-ray diffraction

L Ciprian, S Mihalic, C Lüttich, F Hörich, E Wade… - Applied Physics …, 2024 - pubs.aip.org
Scandium nitride (ScN) has emerged as a promising material in various fields due to its
exceptional characteristics, including high mechanical strength, hardness, high melting …

[PDF][PDF] Influence des défauts induits par implantation ionique sur les propriétés thermoélectriques du ScN

R BURCEA - theses.fr
La transition énergétique repose en grande partie sur le développement de technologies
innovantes. Néanmoins, les matières premières, telles que les terres rares, sont difficiles à …