Emerging steep-slope devices and circuits: Opportunities and challenges

X Li, MS Kim, S George, A Aziz, M Jerry… - … -CMOS Technologies for …, 2019 - Springer
While continuing the CMOS scaling-down becomes unprecedentedly more challenging than
before, intensive exploration on beyond-CMOS nanodevice technologies is an appealing …

Power-efficient heterogeneous many-core design with ncfet technology

S Salamin, M Rapp, A Pathania, A Maity… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
Multi-/many-core, homogeneous or heterogeneous architectures, using the existing CMOS
technology are inevitably approaching the limit of attainable power efficiency due to the …

Enabling Internet-of-Things with opportunities brought by emerging devices, circuits and architectures

X Li, K Ma, S George, J Sampson… - VLSI-SoC: System-on …, 2017 - Springer
In recent years, the concept of Internet-of-Things (IoT) has attracted significant interests.
Required by the applications, the IoT power optimization has become the key concern …

HetCore: TFET-CMOS hetero-device architecture for CPUs and GPUs

B Gopireddy, D Skarlatos, W Zhu… - 2018 ACM/IEEE 45th …, 2018 - ieeexplore.ieee.org
Tunneling Field-Effect Transistors (TFETs) attain much higher energy efficiency than CMOS
at low voltages. However, their performance saturates at high voltages and, therefore …

PROCEED: A Pareto optimization-based circuit-level evaluator for emerging devices

S Wang, A Pan, CO Chui… - IEEE Transactions on Very …, 2015 - ieeexplore.ieee.org
Evaluation of novel devices in the context of circuits is crucial to identifying and maximizing
their value. We propose a new framework, Pareto optimization-based circuit-level evaluator …

A high-efficiency switched-capacitance HTFET charge pump for low-input-voltage applications

U Heo, X Li, H Liu, S Gupta, S Datta… - … Conference on VLSI …, 2015 - ieeexplore.ieee.org
This paper presents a high-efficiency switched-capacitance charge pump in 20 nm III-V
heterojunction tunnel field-effect transistor (HTFET) technology for low-input-voltage …

Enabling power-efficient designs with III-V tunnel FETs

MS Kim, H Liu, K Swaminathan, X Li… - 2014 IEEE …, 2014 - ieeexplore.ieee.org
III-V Tunnel FETs (TFET) possess unique characteristics such as steep slope switching, high
gm/IDS, uni-directional conduction, and low voltage operating capability. These …

Sub-10 nm FinFETs and tunnel-FETs: From devices to systems

A Sharma, AA Goud, K Roy - … & Test in Europe Conference & …, 2015 - ieeexplore.ieee.org
In this paper, a detailed device/circuit/system level assessment of sub-10nm GaSb-InAs
Tunneling Field Effect Transistors (TFET) versus Silicon FinFETs operating at near-threshold …

A CNN-inspired mixed signal processor based on tunnel transistors

B Sedighi, I Palit, XS Hu, J Nahas… - … design, automation & …, 2015 - ieeexplore.ieee.org
Novel devices are under investigation to extend the performance scaling trends that have
long been associated with Moore's Law-based device scaling. Among the emerging devices …

Thermal-aware application scheduling on device-heterogeneous embedded architectures

K Swaminathan, J Kotra, H Liu… - … Conference on VLSI …, 2015 - ieeexplore.ieee.org
The challenges of the Power Wall manifest in mobile and embedded processors due to their
inherent thermal and formfactor constraints. The power dissipated over a fixed area, namely …