Decades of experimental and theoretical studies have brought some useful insights about
what defines resistance to amorphization by radiation damage; however, the problem is still …

Recent results on achieving ferromagnetism in transition-metal-doped GaN, AlN and related
materials are discussed. The field of semiconductor spintronics seeks to exploit the spin of …

Radiation tolerance is determined as the ability of crystalline materials to withstand the
accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences …

Atomic scale details of the formation of point defects and their evolution to phase
transformation in silicon (Si) implanted β-Ga 2 O 3 were studied using high resolution …

The paper presents the results of studying the effect of irradiation with 85 MeV Fe 7+ ions on
the optical and structural properties of nitride ceramics at an irradiation temperature of 300 …

We discuss what defines a material's resistance to amorphization by radiation damage. We
propose that resistance is generally governed by the competition between the short-range …

Investigation of mechanisms of defect formation as a result of the interaction of heavy ions
with ceramic materials and subsequent structural disturbances in the volume is considerably …

Interface effects on ion-irradiation tolerance properties are investigated in nanolayered
TiN/AlN films with individual layer thickness varied from 5 nm to 50 nm, prepared by pulsed …

The effect of irradiation with C 2+ ions on changes in optical and structural properties of AlN-
based ceramics has been studied. The choice of C 2+ ions is due to the possibility of …

Ab initio molecular dynamics simulations of low energy recoil events in wurtzite AlN have
been performed to determine threshold displacement energies, defect production and …