[图书][B] Infrared and terahertz detectors

A Rogalski - 2019 - books.google.com
This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of
infrared and terahertz detector technology, from fundamental science to materials and …

New concepts in infrared photodetector designs

P Martyniuk, J Antoszewski, M Martyniuk… - Applied Physics …, 2014 - pubs.aip.org
In 1959, Lawson and co-workers published the paper which triggered development of
variable band gap Hg 1− x Cd x Te (HgCdTe) alloys providing an unprecedented degree of …

Barrier infrared detectors

P Martyniuk, M Kopytko, A Rogalski - Opto-electronics review, 2014 - Springer
In 1959, Lawson and co-workers publication triggered development of variable band gap Hg
1− x Cd x Te (HgCdTe) alloys providing an unprecedented degree of freedom in infrared …

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

C Jia, G Deng, L Liu, P Zhao, G Song… - Journal of Physics D …, 2023 - iopscience.iop.org
Reduction in the size, weight, and power (SWaP) consumption of an infrared (IR) detection
system is one of the critical challenges lying ahead for the development of IR detector …

Barrier engineering for HgCdTe unipolar detectors on alternative substrates

F Uzgur, S Kocaman - Infrared Physics & Technology, 2019 - Elsevier
Delta-doped layers together with compositionally grading have been utilized to get nBn
configurations for the HgCdTe material system in all the short-wave (SWIR), medium-wave …

Dual-band unipolar barrier infrared photodetector based on InGaAsSb bulk and type-II InAs/GaSb superlattice absorbers

VM More, Y Kim, J Jeon, JC Shin, SJ Lee - Journal of Alloys and …, 2021 - Elsevier
We reported on the material and device characterization of a dual-band unipolar barrier
infrared photodetector with n-In 0.28 Ga 0.72 As 0.25 Sb 0.75 bulk and InAs/GaSb type-II …

Midwavelength interband cascade infrared photodetectors with superlattice absorbers and gain

L Lei, L Li, H Lotfi, H Ye, RQ Yang… - Optical …, 2018 - spiedigitallibrary.org
We report on a comparison study of the electrical and optical properties of a set of device
structures with different numbers of cascade stages, type-II superlattice (T2SL) absorber …

Application of localization landscape theory and the k· p model for direct modeling of carrier transport in a type II superlattice InAs/InAsSb photoconductor system

TY Tsai, K Michalczewski, P Martyniuk… - Journal of Applied …, 2020 - pubs.aip.org
Localization landscape (LL) theory is applied to directly model carrier transport in a type II
superlattice (T2SL) InAs/InAsSb photoconductor system. It is difficult to apply the classical …

The role of noise in specific detectivity of InAs/GaSb superlattice MWIR bariodes

K Czuba, Ł Ciura, I Sankowska, E Papis-Polakowska… - Sensors, 2021 - mdpi.com
In this paper, the results of the electrical, noise, and optical characterization of pin and pBin
diodes with AlSb and 4 ML AlSb/8 ML GaSb superlattice barriers in High-Operating …

Design and development of two-dimensional strained layer superlattice (SLS) detector arrays for IR applications

AK Sood, JW Zeller, RE Welser, YR Puri… - Two-dimensional …, 2018 - books.google.com
The implementation of strained layer superlattices (SLS) for detection of infrared (IR)
radiation has enabled compact, high performance IR detectors and two-dimensional focal …