Influence of the aluminium doping on the physical and gas sensing properties of SnO2 for H2 gas detection
AI Khudiar, AM Oufi - Sensors and Actuators B: Chemical, 2021 - Elsevier
Abstract Tin Oxide (SnO 2) thin films were doped with Aluminium (Al) thin films with four
different concentrations 0, 1, 3 and 5% were deposited using the RF Plasma sputtering …
different concentrations 0, 1, 3 and 5% were deposited using the RF Plasma sputtering …
N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates
Recent observation of high density polarization-induced two-dimensional electron gases in
ultra-thin N-polar GaN layers grown on single-crystal AlN has enabled the development of N …
ultra-thin N-polar GaN layers grown on single-crystal AlN has enabled the development of N …
[HTML][HTML] Record high electron mobility and low sheet resistance on scaled-channel N-polar GaN/AlN heterostructures grown on on-axis N-polar GaN substrates by …
GaN-based high electron mobility transistors (HEMTs) have demonstrated high frequency
power amplification with considerably larger output power densities than that available from …
power amplification with considerably larger output power densities than that available from …
[HTML][HTML] Polarization-induced 2D electron gases in N-polar AlGaN/AlN heterostructures on single-crystal AlN substrates
Polarization-induced carriers play an important role in achieving high electrical conductivity
in ultrawide bandgap semiconductor AlGaN, which is essential for various applications …
in ultrawide bandgap semiconductor AlGaN, which is essential for various applications …
[HTML][HTML] High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0. 85Ga0. 15N heterostructures on single-crystal AlN …
The polarization difference and band offset between Al (Ga) N and GaN induce two-
dimensional (2D) free carriers in Al (Ga) N/GaN heterojunctions without any chemical …
dimensional (2D) free carriers in Al (Ga) N/GaN heterojunctions without any chemical …
Revealing the TMA 2 SnI 4/GaN band alignment and carrier transfer across the interface
In this study, we investigate the electronic properties of the GaN junction with TMA2SnI4–(2-
thiophene) methylammonium tin iodide, a Pb-free 2D perovskite. Through spectroscopic …
thiophene) methylammonium tin iodide, a Pb-free 2D perovskite. Through spectroscopic …
[HTML][HTML] Design of ultra-scaled-channel N-polar GaN HEMTs with high charge density: A systematic study of hole traps and their impact on charge density in the …
It has been previously shown that hole/donor traps at the (Al, Ga) N/GaN interface cause DC-
RF dispersion and output conductance in N-polar GaN high electron mobility transistors …
RF dispersion and output conductance in N-polar GaN high electron mobility transistors …
Electric fields and surface fermi level in undoped GaN/AlN two‐dimensional hole gas heterostructures
Undoped GaN/AlN heterostructures with a high‐density 2D hole gas (2DHG) have recently
been reported, demonstrating that holes can be generated in GaN without magnesium (Mg) …
been reported, demonstrating that holes can be generated in GaN without magnesium (Mg) …
Electro-modulation and surface photovoltage spectroscopy with semi-transparent graphene electrodes
AM Melnychenko, SJ Zelewski, D Hlushchenko… - Applied Surface …, 2023 - Elsevier
Investigating the fundamental properties of new semiconductor materials and structures
requires the use of a wide range of optical spectroscopy techniques. Among them, there are …
requires the use of a wide range of optical spectroscopy techniques. Among them, there are …
Improving the parameters of metal oxide gas sensors through doping
Metal oxide gas sensors have low cost, high sensitivity, and ease of manufacture and have
received a lot of attention. However, to fulfill the demands of diverse gas-sensing …
received a lot of attention. However, to fulfill the demands of diverse gas-sensing …