Roadmap of spin–orbit torques

Q Shao, P Li, L Liu, H Yang, S Fukami… - IEEE transactions on …, 2021 - ieeexplore.ieee.org
Spin–orbit torque (SOT) is an emerging technology that enables the efficient manipulation of
spintronic devices. The initial processes of interest in SOTs involved electric fields, spin …

Review on spintronics: Principles and device applications

A Hirohata, K Yamada, Y Nakatani, IL Prejbeanu… - Journal of Magnetism …, 2020 - Elsevier
Spintronics is one of the emerging fields for the next-generation nanoelectronic devices to
reduce their power consumption and to increase their memory and processing capabilities …

Giant tunable spin Hall angle in sputtered Bi2Se3 controlled by an electric field

Q Lu, P Li, Z Guo, G Dong, B Peng, X Zha, T Min… - Nature …, 2022 - nature.com
Finding an effective way to greatly tune spin Hall angle in a low power manner is of
fundamental importance for tunable and energy-efficient spintronic devices. Recently …

Orbital torque switching in perpendicularly magnetized materials

Y Yang, P Wang, J Chen, D Zhang, C Pan, S Hu… - Nature …, 2024 - nature.com
The orbital Hall effect in light materials has attracted considerable attention for developing
orbitronic devices. Here we investigate the orbital torque efficiency and demonstrate the …

2D magnetic heterostructures and emergent spintronic devices

Q Hao, H Dai, M Cai, X Chen, Y Xing… - Advanced Electronic …, 2022 - Wiley Online Library
The discovery of 2D intrinsic magnetic materials with ultrathin structures and smooth
surfaces has enabled the investigation of fundamental magnetism physics and creation of …

Robust negative longitudinal magnetoresistance and spin–orbit torque in sputtered Pt3Sn and Pt3SnxFe1-x topological semimetal

D Zhang, W Jiang, H Yun, OJ Benally… - Nature …, 2023 - nature.com
Contrary to topological insulators, topological semimetals possess a nontrivial chiral
anomaly that leads to negative magnetoresistance and are hosts to both conductive bulk …

Spin–orbit torques based on topological materials

Y Wang, H Yang - Accounts of Materials Research, 2022 - ACS Publications
Conspectus Widespread applications of magnetic devices, such as magnetic random-
access memory (MRAM), logic-in memory, and neuromorphic computing devices, require an …

Large Spin‐to‐Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Silicon

E Longo, M Belli, M Alia, M Rimoldi… - Advanced Functional …, 2022 - Wiley Online Library
Spin‐charge interconversion phenomena at the interface between magnetic materials and
topological insulators (TIs) are attracting enormous interest in the research effort toward the …

Spin-Hall effect due to the bulk states of topological insulators: Extrinsic contribution to the proper spin current

JH Cullen, D Culcer - Physical Review B, 2023 - APS
The substantial amount of recent research into spin torques has been accompanied by a
revival of interest in the spin-Hall effect. This effect contributes to the spin torque in many …

All-Electrical Spin-to-Charge Conversion in Sputtered BixSe1-x

WY Choi, IC Arango, VT Pham, DC Vaz, H Yang… - Nano Letters, 2022 - ACS Publications
One of the major obstacles to realizing spintronic devices such as MESO logic devices is the
small signal magnitude used for magnetization readout, making it important to find materials …