A compact model of gate capacitance in ballistic gate-all-around carbon nanotube field effect transistors
This paper presents a one-dimensional analytical model for calculating gate capacitance in
Gate-All-Around Carbon Nanotube Field Effect Transistor (GAA-CNFET) using electrostatic …
Gate-All-Around Carbon Nanotube Field Effect Transistor (GAA-CNFET) using electrostatic …
Analytical computation of electrical parameters in GAAQWT and CNTFET with identical configuration using NEGF method
ABSTRACT A two-dimensional quantum mechanical model is presented for calculating
carrier transport in ultra-thin gate-all-around quantum wire transistor (GAAQWT) and carbon …
carrier transport in ultra-thin gate-all-around quantum wire transistor (GAAQWT) and carbon …
Impact of channel parameters on threshold voltage at variable temperatures of Double-gate CNTFET
A Lakhanpal, KS Sandha - Micro and Nanostructures, 2022 - Elsevier
This paper focuses mainly on the effect of various channel parameters like chirality, diameter
of CNT, high-k dielectric materials and oxide layer thickness of DG-CNTFET on the threshold …
of CNT, high-k dielectric materials and oxide layer thickness of DG-CNTFET on the threshold …
Performance Analysis of Thickness Dependency of Control Coefficients of CNTFET
MS Farhan, S Ameen, MF Monsur… - 2024 6th International …, 2024 - ieeexplore.ieee.org
For scaling Field-Effect Transistors (FET) into nanometers, carbon nanotube (CNT) is a
possible contender. CNTFETs' performance is highly impacted by the length of the CNT and …
possible contender. CNTFETs' performance is highly impacted by the length of the CNT and …
[PDF][PDF] Semiconducting SWCNT Photo Detector for High Speed Switching Through Single Halo Doping.
A Arulmary, V Rajamani, T Kavitha - Computer Systems Science …, 2023 - cdn.techscience.cn
The method opted for accuracy, and no existing studies are based on this method. A design
and characteristic survey of a new small band gap semiconducting Single Wall Carbon …
and characteristic survey of a new small band gap semiconducting Single Wall Carbon …
Low Power Design of Various D-Flip-Flop Techniques using CNFET: A Comparative Study
N Sharma, S Kaundal - 2020 IEEE International Conference on …, 2020 - ieeexplore.ieee.org
Technology advancement leads to device operation at sub-threshold level and must be
scaled down to nanometer range. Eventually speed and power related issues arise in logic …
scaled down to nanometer range. Eventually speed and power related issues arise in logic …