Strong acid, alkali, or active chemicals are generally employed in chemical mechanical
polishing (CMP) slurry for the ultra-precision machining of semiconductor substrates …

High speed friction induced removal behavior of single crystal silicon carbide (4H-SiC) by
pure metals (iron and nickel) were investigated, and the subsurface damage were explored …

To improve the ultraprecision processing efficiency and surface quality of single-crystal 4H-
SiC substrates, a lapping-polishing plate combining magnetically controlled abrasive …

In this study, to enhance the cutting efficiency and precision of the chip while minimizing
waste from cutting damage, molecular dynamics simulation is used to investigate the …

A combination of the magnetically-controlled abrasive solidification orientation and solid-
phase Fenton reaction was used to fabricate new lapping–polishing plates to improve the …

Electrochemical shear-thickening polishing (ESTP) represents an innovative and highly
efficient polishing method that combines the synergistic effects of anodic oxidation with …

For high performance manufacturing of micro parts and features, a hybrid chemical
modification strategy is proposed to decrease critical energy barrier of mechanical removal …

Chemical mechanical polishing (CMP) is the predominant method for finishing hard and
brittle materials that are challenging to machine. We proposed replacing the soft polishing …

Microcracks inevitably appear on the SiC wafer surface during conventional thinning. It is
generally believed that the damage-free surfaces obtained during chemical reactions are an …

磁流变变间隙动压平坦化加工利用工件的轴向低频振动使磁流变液产生挤压强化效应,
可以有效提高加工效果并使光电晶片快速获得纳米级表面粗糙度. 通过旋转式测力仪试验研究 …