Observation of Moment-Dependent and Field-Driven Unidirectional Magnetoresistance in CoFeB/InSb/CdTe Heterostructures

J Liu, L Liao, B Rong, Y Wu, H Ruan… - … Applied Materials & …, 2024 - ACS Publications
Magnetoresistance effects are crucial for understanding the charge-spin transport as well as
propelling the advancement of spintronic applications. Here, we report the coexistence of …

van der Waals integration of mixed-dimensional CeO 2@ Bi heterostructure for high-performance self-powered photodetector with fast response speed

X Liu, C Liu, Y Fu, Y Xu, K Khan, AK Tareen, Y Zhang - Nanoscale, 2022 - pubs.rsc.org
Heterostructures have been extensively investigated for optoelectronic devices owing to
their fantastic physicochemical properties. Herein, a mixed-dimensional van der Waals …

Room‐Temperature Gate‐Tunable Nonreciprocal Charge Transport in Lattice‐Matched InSb/CdTe Heterostructures

L Li, Y Wu, X Liu, J Liu, H Ruan, Z Zhi… - Advanced …, 2023 - Wiley Online Library
Symmetry manipulation can be used to effectively tailor the physical order in solid‐state
systems. With the breaking of both the inversion and time‐reversal symmetries …

Highly efficient electric-field control of giant Rashba spin–orbit coupling in lattice-matched InSb/CdTe heterostructures

Y Zhang, F Xue, C Tang, J Li, L Liao, L Li, X Liu… - ACS …, 2020 - ACS Publications
Spin–orbit coupling (SOC), the relativistic effect describing the interaction between the
orbital and spin degrees of freedom, provides an effective way to tailor the spin/magnetic …

Moiré pattern formation in epitaxial growth on a covalent substrate: Sb on InSb (111) A

B Liu, T Wagner, S Enzner, P Eck, M Kamp… - Nano Letters, 2023 - ACS Publications
Structural moiré superstructures arising from two competing lattices may lead to unexpected
electronic behavior. Sb is predicted to show thickness-dependent topological properties …

Helical conducting edge states in narrow-gap semiconductors without band inversion

WK Lou, W Yang, K Chang - Physical Review B, 2022 - APS
Band inversion accompanied by the emergence of gapless and helical edge states at the
boundary is a hallmark of 2D topological insulators. However, a recent experiment reports …

Direct growth of InSb nanowires on CdTe (0 0 1) substrates by molecular beam epitaxy

S Thainoi, S Kiravittaya, N Nuntawong… - Materials Science and …, 2022 - Elsevier
The molecular beam epitaxial growth of InSb on CdTe (0 0 1) substrates has been
performed with a specific growth condition, that results in elongated wire morphology …

Lattice-matched heteroepitaxial preparation of InSb/CdTe on Si (111) substrate by magnetron sputtering

K Wang, M Zhang, T Zeng, F He, W Wen - Vacuum, 2023 - Elsevier
InSb films were deposited on Si (111) substrate using the CdTe buffer layers by magnetron
sputtering. The effects of CdTe buffer layers on the crystal structure, morphological optical …

Optical Structural and Phonon Characteristics of Epitaxially Grown II–VI/III–V Films and Superlattices

DN Talwar - Advances in Fabrication and Investigation of …, 2024 - Springer
This chapter focuses on providing a systematic analysis of the far-infrared (FIR) reflectivity/
transmission, Raman scattering, spectroscopic ellipsometry (SE), and high-resolution …

Heteroepitaxial growth of InSb thin film on SrTiO3 (001) by pulsed laser deposition for magnetic Hall sensor application

K Lee, K Shigematsu, M Azuma - Japanese Journal of Applied …, 2022 - iopscience.iop.org
Ⅲ–Ⅴ semiconductor compound InSb with a zinc blende structure and extremely high
electron mobility was grown as a thin film on SrTiO 3 (STO)(001) substrate by pulsed laser …