TiO 2-doped HfO 2 gate dielectric thin films have been deposited on Si (1 0 0) substrates by
RF sputtering. The component, morphology, structure, optical and interfacial properties of Hf …

Abstract Antimony chalcogenide Sb 2 (S, Se) 3 is attracting a lot of attention as photovoltaic
absorber owing to its rewarding photoelectric properties, low toxicity, and earth abundance …

Sputtering-derived amorphous InGaZnO (a-IGZO) thin films were grown on Si and glass
substrates in a mixed ambient of Ar and O 2 at fixed 0.5 Pa working pressure. The influence …

The effects of substrate temperature (T s) on the electrical and optical properties of
amorphous InGaZnO thin films deposited by sputtering have been investigated. As T s …

Co-doped ZnO thin films on sapphire (0 0 0 1) substrates were deposited by PLD at various
substrate temperatures in a one Pa oxygen ambient condition. The structural and magnetic …

Abstract In/ZnIn _ 2 Te _ 4/n-Si/Ag In/ZnIn 2 Te 4/n-Si/Ag diode structure was fabricated by
the thermal deposition of a ZnIn _ 2 Te _ 4 ZnIn 2 Te 4 thin film on n-Si wafer substrate with …

Abstract Thermally deposited Cu-Ga-S thin films were optically characterized by means of
experimental techniques of transmission measurements. The analyses of transmittance …

Abstract Zn-In-Se (ZIS) thin films were prepared by sequential evaporation of its elemental
sources on the glass substrates. The effect of thermal annealing under nitrogen environment …

In this work, zinc selenide (ZnSe) thin films were deposited by thermal evaporation method
using pure elemental (Zn and Se) sources. The physical properties of the films have been …

Structural characterization of nanocrystalline Al-doped ZnTe semiconductors, obtained by
mechanical milling from ZnTe and Al 2 O 3 powders, is presented. The samples were …