Recent advances in flexible and stretchable electronics (FSE), a technology diverging from
the conventional rigid silicon technology, have stimulated fundamental scientific and …

In the advancement of complementary metal-oxide-semiconductor device technology, SiO2
was used as an outstanding dielectric and has dominated the microelectronics industry for …

Additive manufacturing of ceramics has been actively investigated with the objective of
fabricating complex structures that compete in terms of material performance with …

The thermal stability and structural characteristics for gate stack structure of HfO2 dielectrics
grown by DC reactive magnetron sputtering were investigated. The structural characteristics …

Due to the limitations in conventional complementary metal–oxide–semiconductor (CMOS)
scaling technology in recent years, innovation in transistor structures and integration of …

With the continuous development and progress of flexible electronic technology, the
flexibility requirements are becoming more and more stringent for each device component …

The ns-laser ablation characteristics of tetragonal 3YSZ versus cubic 8YSZ have been
investigated to minimize a transfer of particulates in the pulsed laser deposition process …

In the last three decades, study has seen the evolution of metal oxide semiconductor (MOS)
devices as device geometries have shrunk in line with Moore's law. This device shrunk …

The laser ablation characteristics of yttria-stabilized zirconia (YSZ) have been investigated
as a function of the target microstructure and dopant level for different nanosecond-[ArF, KrF …

US8399056B2 - Method of forming high-k dielectric films based on novel titanium, zirconium,
and hafnium precursors and their use for semiconductor manufacturing - Google Patents …