A synoptic review of nanoscale vacuum channel transistor: Fabrication to electrical performance
The vacuum channel transistor has emerged as a promising candidate for next-generation
technology due to its intriguing features compared to the conventional field effect transistor …
technology due to its intriguing features compared to the conventional field effect transistor …
Design and performance optimization of junctionless bottom spacer FinFET for digital/analog/RF applications at sub-5nm technology node
Design and Performance Optimization of Junctionless Bottom Spacer FinFET for Digital/Analog/RF
Applications at Sub-5nm Technology Node - IOPscience This site uses cookies. By continuing …
Applications at Sub-5nm Technology Node - IOPscience This site uses cookies. By continuing …
Self-heating and corner rounding effects on time dependent dielectric breakdown of stacked multi-nanosheet FETs
JW Lim, C Yoo, K Park, J Jeon - IEEE Access, 2023 - ieeexplore.ieee.org
In this work, by employing the developed kinetic Monte Carlo (kMC)-based time-dependent
dielectric breakdown (TDDB) analysis simulator, the lifetime characteristics change by TDDB …
dielectric breakdown (TDDB) analysis simulator, the lifetime characteristics change by TDDB …
Selection of low dimensional material alternatives to silicon for next generation tunnel field effect transistors
This paper presents a method-based investigation on the application of low dimensional
materials like graphene, carbon nanotube (CNT), transition metal dichalcogenides (TMDCs) …
materials like graphene, carbon nanotube (CNT), transition metal dichalcogenides (TMDCs) …
Analysis on the performance of CNTFET devices based on the impact of CNT diameter variation
Currently, the IC industry is facing difficulties to continue scaling down the size of MOSFET
technology due its physical limitation. Thus, replacing silicon with carbon nanotube (CNT) …
technology due its physical limitation. Thus, replacing silicon with carbon nanotube (CNT) …
Study and analysis on CNTFET Design and process parameters for performance optimization
Carbon Nanotube Field Effect Transistor (CNTFET) technology is one of the favorable
devices to replace MOSFET technology. A lot of research has been done to further enhance …
devices to replace MOSFET technology. A lot of research has been done to further enhance …
Impact of interface trap charge on analog/rf parameters of novel heterogeneous gate dielectric tri-metal gate finfet
S Saraswat, DS Yadav - 2021 International Conference on …, 2021 - ieeexplore.ieee.org
In this script, an innovative structure is introduced to optimize TMG FinFET by employing
dielectric material engineering. In this method, HfO 2 is placed towards the source side, with …
dielectric material engineering. In this method, HfO 2 is placed towards the source side, with …
Optimized design of carbon nanotube field-effect transistor using Taguchi method for enhanced current ratio performance
Presently, the integrated circuit (IC) industry grapples with obstacles in downsizing MOSFET
technology further, hindered by its inherent physical constraints. Therefore, the substitution …
technology further, hindered by its inherent physical constraints. Therefore, the substitution …
Temperature effect on analog/rf and linearity parameters of stacked oxide tmg finfet
DS Yadav, S Saraswat - Silicon, 2022 - Springer
This manuscript aims to design an optimized TMG FinFET by applying dielectric material
engineering. In this technique, H f O 2 is stacked over S i O 2 at the oxide layer to reap the …
engineering. In this technique, H f O 2 is stacked over S i O 2 at the oxide layer to reap the …
Simulation of carbon nanotube field effect transistors using NEGF
S Aravind, S Shravan, S Shrijan… - IOP Conference …, 2016 - iopscience.iop.org
A nearest neighbour tight binding approximation for analysing the IV characteristics of
ballistic CNTFETs is developed making use of the non-equilibrium green's function (NEGF) …
ballistic CNTFETs is developed making use of the non-equilibrium green's function (NEGF) …