Infrared Detectors provides comprehensive coverage of this important aspect of infrared
technology, including details of recent research efforts directed toward improving the …

This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of
infrared and terahertz detector technology, from fundamental science to materials and …

Semiconductor materials and devices continue to occupy a preeminent technological
position due to their importance when building integrated electronic systems used in a wide …

There are three main reasons for the study of antimonides, they are the optical [mainly
infrared], electrical [mainly Insb; the Gasb/Inas heterojunction] and structural [mainly …

The microstructural properties at the initial growth stage of the GaSb heteroepitaxial growth
on a silicon (Si) substrate were investigated using transmission electron microscopy. Well …

The InAs 0.04 Sb 0.96 epilayers with a cutoff wavelength of 12 μm were successfully grown
on semi-insulating (100) GaAs substrates using melt epitaxy (ME). Fourier transform infrared …

We report the first demonstration of InAsSb/AlInSb double heterostructure detectors for room
temperature operation. The structures were grown in a solid source molecular beam epitaxy …

ABSTRACT The InAsoo Sboog epilayers with a cutoff wavelength of 12 pum were
successfully grown on semi-insulating (100) GaAs substrates using melt epitaxy (ME) …

Sb-based materials are investigated for infrared photodetectors capable of performance
comparable or better than that of industry standard material systems such as mercury …

ABSTRACT The InAs0. 04Sb0. 96 epilayers with a cutoff wavelength of 12 µm were
successfully grown on semi-insulating (100) GaAs substrates using melt epitaxy (ME) …