Effect of high-k dielectric on drain current of ID-DG MOSFET using Ortiz-Conde model
Drain-to-source current of independently-driven double gate (ID-DG) MOSFET is analytically
computed following Ortiz-Conde model in sub 100 nm channel length in presence of …
computed following Ortiz-Conde model in sub 100 nm channel length in presence of …
Analytical modelling of electrical parameters and the analogue performance of cylindrical gate-all-around FinFET
This paper presents the cylindrical gate-all-around (GAA) silicon on insulator (SOI) FinFET,
which not only eliminates the corner effect but also shows high on-drain current (I_ ON I …
which not only eliminates the corner effect but also shows high on-drain current (I_ ON I …
[引用][C] The Impact of Substrate Doping Concentration on Electrical Characteristics of 45nm Nmos Device
N Sachdeva, M Vashishath… - i-Manager's Journal on …, 2017 - iManager Publications