A review on quantum computing: From qubits to front-end electronics and cryogenic MOSFET physics
Quantum computing (QC) has already entered the industrial landscape and several
multinational corporations have initiated their own research efforts. So far, many of these …
multinational corporations have initiated their own research efforts. So far, many of these …
Energy-efficient computing at cryogenic temperatures
Increasing demand for data-intense computing applications—such as artificial intelligence,
large language models and high-performance computing—has created a need for …
large language models and high-performance computing—has created a need for …
A cryo-CMOS chip that integrates silicon quantum dots and multiplexed dispersive readout electronics
As quantum computers grow in complexity, the technology will have to evolve from large
distributed systems to compact integrated solutions. Spin qubits in silicon quantum dots are …
distributed systems to compact integrated solutions. Spin qubits in silicon quantum dots are …
Theoretical limit of low temperature subthreshold swing in field-effect transistors
This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs
that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical …
that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical …
Cryogenic subthreshold swing saturation in FD-SOI MOSFETs described with band broadening
H Bohuslavskyi, AGM Jansen, S Barraud… - IEEE Electron …, 2019 - ieeexplore.ieee.org
In the standard MOSFET description of the drain current as a function of applied gate
voltage, the subthreshold swing has a fundamental lower limit as a function of temperature …
voltage, the subthreshold swing has a fundamental lower limit as a function of temperature …
Compact modeling of temperature effects in FDSOI and FinFET devices down to cryogenic temperatures
We present compact models that capture published cryogenic temperature effects on silicon
carrier mobility and velocity saturation, as well as fully depleted silicon on insulator (FDSOI) …
carrier mobility and velocity saturation, as well as fully depleted silicon on insulator (FDSOI) …
Physical model of low-temperature to cryogenic threshold voltage in MOSFETs
This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2
K. Interface traps close to the band edge modify the saturating temperature behavior of the …
K. Interface traps close to the band edge modify the saturating temperature behavior of the …
Characterization and modeling of 28-nm FDSOI CMOS technology down to cryogenic temperatures
This paper presents an extensive characterization and modeling of a commercial 28-nm
FDSOI CMOS process operating down to cryogenic temperatures. The important cryogenic …
FDSOI CMOS process operating down to cryogenic temperatures. The important cryogenic …
Characterization and modeling of mismatch in cryo-CMOS
This paper presents a device matching study of a commercial 40-nm bulk CMOS technology
operated at cryogenic temperatures. Transistor pairs and linear arrays, optimized for device …
operated at cryogenic temperatures. Transistor pairs and linear arrays, optimized for device …
Cryogenic characterization of 16 nm FinFET technology for quantum computing
This study presents the first in depth characterization of deep cryogenic electrical behavior of
a commercial 16 nm CMOS FinFET technology. This technology is well suited for a broad …
a commercial 16 nm CMOS FinFET technology. This technology is well suited for a broad …