HfO2-based ferroelectrics: From enhancing performance, material design, to applications
H Chen, X Zhou, L Tang, Y Chen, H Luo… - Applied Physics …, 2022 - pubs.aip.org
Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …
storage, and low energy consumption to fulfill the rapid developments of big data, the …
Interplay between oxygen defects and dopants: effect on structure and performance of HfO 2-based ferroelectrics
M Materano, PD Lomenzo, A Kersch… - Inorganic Chemistry …, 2021 - pubs.rsc.org
Ten years after the first report on ferroelectricity in HfO2, researchers are still occupied
unraveling the different causes behind this phenomenon. Among them, oxygen related …
unraveling the different causes behind this phenomenon. Among them, oxygen related …
Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices
Unconventional ferroelectricity exhibited by hafnia-based thin films—robust at nanoscale
sizes—presents tremendous opportunities in nanoelectronics. However, the exact nature of …
sizes—presents tremendous opportunities in nanoelectronics. However, the exact nature of …
Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
Origin of ferroelectric phase stabilization via the clamping effect in ferroelectric hafnium zirconium oxide thin films
The presence of the top electrode on hafnium oxide‐based thin films during processing has
been shown to drive an increase in the amount of metastable ferroelectric orthorhombic …
been shown to drive an increase in the amount of metastable ferroelectric orthorhombic …
A Perspective on ferroelectricity in hafnium oxide: Mechanisms and considerations regarding its stability and performance
Ferroelectric hafnium oxides are poised to impact a wide range of microelectronic
applications owing to their superior thickness scaling of ferroelectric stability and …
applications owing to their superior thickness scaling of ferroelectric stability and …
Structural Polymorphism Kinetics Promoted by Charged Oxygen Vacancies in
LY Ma, S Liu - Physical Review Letters, 2023 - APS
Defects such as oxygen vacancy are widely considered to be critical for the performance of
ferroelectric HfO 2-based devices, and yet atomistic mechanisms underlying various exotic …
ferroelectric HfO 2-based devices, and yet atomistic mechanisms underlying various exotic …
Temperature‐Dependent Phase Transitions in HfxZr1‐xO2 Mixed Oxides: Indications of a Proper Ferroelectric Material
U Schroeder, T Mittmann, M Materano… - Advanced Electronic …, 2022 - Wiley Online Library
Abstract Knowledge about phase transitions in doped HfO2 and ZrO2‐based films is crucial
for developing future ferroelectric devices. These devices should perform in ambient …
for developing future ferroelectric devices. These devices should perform in ambient …
Excellent Reliability and High-Speed Antiferroelectric HfZrO2 Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias Engineering
Hafnia-based ferroelectric tunnel junctions (FTJs) have great potential for use in logic in
nonvolatile memory because of their complementary metal–oxide–semiconductor process …
nonvolatile memory because of their complementary metal–oxide–semiconductor process …
High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0. 5Zr0. 5O2 devices by control of oxygen-deficient layer
The formation of an interfacial layer is believed to affect the ferroelectric properties in HfO 2
based ferroelectric devices. The atomic layer deposited devices continue suffering from a …
based ferroelectric devices. The atomic layer deposited devices continue suffering from a …