Pulse test techniques are widely adopted in characterizing both the static and dynamic
performances of semiconductor devices considering various device structures and operating …

Gallium nitride high-electron-mobility transistors (GaN HEMTs) exhibit dynamic ON-
resistance (dR on), where the ON-resistance immediately after turn-ON is higher than the dc …

In recent years, there has been a trend for improved performance in semiconductor
switches, allowing power electronic systems to achieve higher efficiency and higher power …

Gallium nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) can
achieve high frequency and high efficiency due to its excellent switching performance …

The dynamic ON-resistance in gallium nitride (GaN) devices is problematic as it can impair
the converter's efficiency the increased conduction loss. In this paper, the hard-switching …

This letter introduces a new physics-based SPICE modeling method for the dynamic on-
state resistance (R on, dy) of gallium nitride based p-type gate power high electron mobility …

In this paper, performance degradations of enhancement mode (E-mode) gallium nitride
(GaN) high-electron-mobility-transistors (HEMTs) under accelerated power cycling tests are …

Class-E power amplifiers have regained academic interest over the past decades due to the
introduction of new high-performance wide-bandgap semiconductor devices and the …

GaN-HEMTs impress with excellent properties, and therefore power electronics engineers
pay a lot of attention to them. However, during switching operation some devices show …

This letter proposes an on-state drain-source voltage () measurement circuit for SiC
MOSFETs. The proposed circuit effectively solves the problem of inconsistent diode volt …