Extreme ultraviolet lithography and three dimensional integrated circuit—A review
B Wu, A Kumar - Applied Physics Reviews, 2014 - pubs.aip.org
The term 3D IC generally means an IC package having multiple device layers, which is
different with 3D transistor structures such as the FinFET. 3D packaging and 3D integration …
different with 3D transistor structures such as the FinFET. 3D packaging and 3D integration …
Germanium CMOS potential from material and process perspectives: Be more positive about germanium
A Toriumi, T Nishimura - Japanese Journal of Applied Physics, 2017 - iopscience.iop.org
CMOS miniaturization is now approaching the sub-10 nm level, and further downscaling is
expected. This size scaling will end sooner or later, however, because the typical size is …
expected. This size scaling will end sooner or later, however, because the typical size is …
Germanium based field-effect transistors: Challenges and opportunities
The performance of strained silicon (Si) as the channel material for today's metal-oxide-
semiconductor field-effect transistors may be reaching a plateau. New channel materials …
semiconductor field-effect transistors may be reaching a plateau. New channel materials …
Ultimate scaling of CMOS logic devices with Ge and III–V materials
M Heyns, W Tsai - Mrs bulletin, 2009 - cambridge.org
Over the years, many new materials have been introduced in advanced complementary
metal oxide semiconductor (CMOS) processes in order to continue the trend of reducing the …
metal oxide semiconductor (CMOS) processes in order to continue the trend of reducing the …
Intrinsic charge trapping in amorphous oxide films: status and challenges
We review the current understanding of intrinsic electron and hole trapping in insulating
amorphous oxide films on semiconductor and metal substrates. The experimental and …
amorphous oxide films on semiconductor and metal substrates. The experimental and …
Surface preparation and deposited gate oxides for gallium nitride based metal oxide semiconductor devices
RD Long, PC McIntyre - Materials, 2012 - mdpi.com
The literature on polar Gallium Nitride (GaN) surfaces, surface treatments and gate
dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of …
dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of …
Chemical properties of oxidized silicon carbide surfaces upon etching in hydrofluoric acid
Hydrogen termination of oxidized silicon in hydrofluoric acid results from an etching process
that is now well understood and accepted. This surface has become a standard for studies of …
that is now well understood and accepted. This surface has become a standard for studies of …
Ge (001) surface cleaning methods for device integration
Germanium (Ge), with its higher hole and electron mobility than silicon, is a promising
candidate to replace silicon for future complementary metal-oxide-semiconductor (CMOS) …
candidate to replace silicon for future complementary metal-oxide-semiconductor (CMOS) …
Atomic layer deposition of dielectrics on Ge and III–V materials for ultrahigh performance transistors
The prospect of utilizing alternative transistor channel materials for ultrahigh performance
transistors will require suitable gate dielectrics for surface-channel field-effect devices. With …
transistors will require suitable gate dielectrics for surface-channel field-effect devices. With …
High-k/metal gate innovations enabling continued CMOS scaling
MM Frank - 2011 Proceedings of the European Solid-State …, 2011 - ieeexplore.ieee.org
High-k dielectrics and metal gate electrodes have entered complementary metal-oxide-
semiconductor (CMOS) logic technology, integrated in both gate-first and gate-last schemes …
semiconductor (CMOS) logic technology, integrated in both gate-first and gate-last schemes …