For many decades CMOS devices have been successfully scaled down to achieve higher
speed and increased performance of integrated circuits at lower cost. Today's charge-based …

Modelling of spin transport and spin dynamics, as a prerequisite for designing spintronic
devices, is considered. Spin injection into a semiconductor under charge depletion, charge …

Spin transfer nano-oscillators (STNOs) are a new type of radio frequency (RF) oscillators
that utilize the current-induced magnetization precession in a magnetic tunnel junction …

Recently, we proposed an alternative non-volatile magnetic flip flop which allows high
integration density. This work extends the up to now gained results to the devices' …

The term spintronics is very general and covers a vast number of devices with an extreme
variety in operating principles and practical feasibility for commercial applications. This …

Nowadays there are two big obstacles for further progress in CMOS device technology. The
energy dissipation due to leakage and the energy required to copy information between …

Chirality is prevalent in symmetrical objects in nature at all length scales exhibiting
properties for useful manipulation toward various applications. The world of magnetics is no …

This chapter presents a short introduction into the physics necessary to understand the
spintronic effects, like the magnetoresistance effect, spin-transfer torque, spin Hall effect, and …

Utilizing micromagnetic modeling, we have explained the unprobed characteristics of 360°
full cycle in-plane magnetization rotation and the resulting propagation of a magnetization …

The static power dissipation and the communication bandwidth between memory and
processors have become performance limiting bottlenecNs for modern computer systems …