Fundamentals of the nanowire solar cell: Optimization of the open circuit voltage
Present day nanowire solar cells have reached an efficiency of 17.8%. Nanophotonic
engineering by nanowire tapering allows for high solar light absorption. In combination with …
engineering by nanowire tapering allows for high solar light absorption. In combination with …
Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing
We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with
diameters ranging from 80 to 600 nm using selective-area metal–organic vapor-phase …
diameters ranging from 80 to 600 nm using selective-area metal–organic vapor-phase …
Recent progress in integration of III–V nanowire transistors on Si substrate by selective-area growth
K Tomioka, T Fukui - Journal of Physics D: Applied Physics, 2014 - iopscience.iop.org
We report on the recent progress in electronic applications using III–V nanowires (NWs) on
Si substrates using the selective-area growth method. This method could align vertical III–V …
Si substrates using the selective-area growth method. This method could align vertical III–V …
Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
III/V semiconductor nanostructures have significant potential in device applications, but
effective surface passivation is critical due to their large surface-to-volume ratio. For InP such …
effective surface passivation is critical due to their large surface-to-volume ratio. For InP such …
A new strategy for selective area growth of highly uniform InGaAs/InP multiple quantum well nanowire arrays for optoelectronic device applications
III‐V semiconductor nanowires with quantum wells (QWs) are promising for ultra‐compact
light sources and photodetectors from visible to infrared spectral region. However, most of …
light sources and photodetectors from visible to infrared spectral region. However, most of …
Growth and photoelectrochemical energy conversion of wurtzite indium phosphide nanowire arrays
Photoelectrochemical (PEC) water splitting into hydrogen and oxygen is a promising
strategy to absorb solar energy and directly convert it into a dense storage medium in the …
strategy to absorb solar energy and directly convert it into a dense storage medium in the …
Nanophotonic integrated circuits from nanoresonators grown on silicon
Harnessing light with photonic circuits promises to catalyse powerful new technologies
much like electronic circuits have in the past. Analogous to Moore's law, complexity and …
much like electronic circuits have in the past. Analogous to Moore's law, complexity and …
Exploring the size limitations of wurtzite III–V film growth
Metastable crystal phases of abundant semiconductors such as III–Vs, Si, or Ge comprise
enormous potential to address current limitations in green light-emitting electrical diodes …
enormous potential to address current limitations in green light-emitting electrical diodes …
Nanopillar quantum well lasers directly grown on silicon and emitting at silicon-transparent wavelengths
Future expansion of computing capabilities relies on a reduction of energy consumption in
silicon-based integrated circuits. A promising solution is to replace electrical wires with …
silicon-based integrated circuits. A promising solution is to replace electrical wires with …
Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control
T Stettner, P Zimmermann, B Loitsch… - Applied Physics …, 2016 - pubs.aip.org
We demonstrate the growth and single-mode lasing operation of GaAs-AlGaAs core-
multishell nanowires (NW) with radial single and multiple GaAs quantum wells (QWs) as …
multishell nanowires (NW) with radial single and multiple GaAs quantum wells (QWs) as …